Multifunctional MoS2 Transistors with Electrolyte Gel Gating
Binmin Wu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorXudong Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorHongwei Tang
State Key Laboratory of ASIC and System School of Microelectronics, Fudan University, Shanghai, 200433 China
Search for more papers by this authorWei Jiang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorYan Chen
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorZhen Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorZhuangzhuang Cui
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorTie Lin
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorHong Shen
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorWeida Hu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorXiangjian Meng
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorCorresponding Author
Wenzhong Bao
State Key Laboratory of ASIC and System School of Microelectronics, Fudan University, Shanghai, 200433 China
E-mail: [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Jianlu Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
E-mail: [email protected]; [email protected]
Search for more papers by this authorJunhao Chu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorBinmin Wu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorXudong Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorHongwei Tang
State Key Laboratory of ASIC and System School of Microelectronics, Fudan University, Shanghai, 200433 China
Search for more papers by this authorWei Jiang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorYan Chen
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorZhen Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorZhuangzhuang Cui
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorTie Lin
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorHong Shen
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorWeida Hu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorXiangjian Meng
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
Search for more papers by this authorCorresponding Author
Wenzhong Bao
State Key Laboratory of ASIC and System School of Microelectronics, Fudan University, Shanghai, 200433 China
E-mail: [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Jianlu Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
E-mail: [email protected]; [email protected]
Search for more papers by this authorJunhao Chu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210 China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049 China
Search for more papers by this authorAbstract
MoS2, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS2, which is dominated by electron transport, is always a challenge. Here, MoS2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 105, and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS2 channel reaches ≈9 × 1013 and 8.85 × 1013 cm−2, respectively. The electrolyte gel-assisted MoS2 phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS2 p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 107. These results demonstrate that modifying the conductance of MoS2 through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.
Conflict of Interest
The authors declare no conflict of interest.
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