Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE
Corresponding Author
Atsushi Tanaka
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Corresponding author: e-mail [email protected], Phone: +8152-789-5275, Fax: +8152-789-3156
Search for more papers by this authorOusmane1 Barry
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorKentaro Nagamatsu
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorJunya Matsushita
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorManato Deki
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorYuto Ando
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorMaki Kushimoto
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorShugo Nitta
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorYoshio Honda
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorHiroshi Amano
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorCorresponding Author
Atsushi Tanaka
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Corresponding author: e-mail [email protected], Phone: +8152-789-5275, Fax: +8152-789-3156
Search for more papers by this authorOusmane1 Barry
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorKentaro Nagamatsu
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorJunya Matsushita
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorManato Deki
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorYuto Ando
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorMaki Kushimoto
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorShugo Nitta
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorYoshio Honda
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorHiroshi Amano
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, 464-8603 Nagoya, Japan
Search for more papers by this authorAbstract
In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices.
(a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.
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