Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films
Corresponding Author
Norio Tokuda
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Corresponding author: e-mail [email protected], Phone/Fax: +81 76 234 4875
Search for more papers by this authorMasahiko Ogura
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorTsubasa Matsumoto
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorSatoshi Yamasaki
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorTakao Inokuma
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Search for more papers by this authorCorresponding Author
Norio Tokuda
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Corresponding author: e-mail [email protected], Phone/Fax: +81 76 234 4875
Search for more papers by this authorMasahiko Ogura
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorTsubasa Matsumoto
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorSatoshi Yamasaki
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305 8568 Japan
Search for more papers by this authorTakao Inokuma
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa, 920 1192 Japan
Search for more papers by this authorAbstract
We studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasma-enhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2° and 4°, while hillocks were formed on the CVD-grown diamond (111) films on the substrates with misorientation angles of 0° and 1°. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 2° toward the 
direction, while rough films were grown on the substrate with a misorientation angle of 2° toward the 
direction.
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