Volume 213, Issue 8 pp. 2243-2253
Original Paper

Magnetically controlled space charge capacitance at La1−xSrxMnO3/SrxLa1−xTiO3 interfaces

Rainer Schmidt

Corresponding Author

Rainer Schmidt

Facultad de Ciencias Físicas, Dpto. Física Aplicada III, Universidad Complutense de Madrid, GFMC, 28040 Madrid, Spain

Unidad Asociada “Laboratorio de heteroestructuras con aplicación en espintrónica”, UCM/CSIC, Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain

Corresponding author: e-mail [email protected], Phone: 0034 91 394 4445, Fax: 0034 91 394 5196

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Javier García-Barriocanal

Javier García-Barriocanal

Facultad de Ciencias Físicas, Dpto. Física Aplicada III, Universidad Complutense de Madrid, GFMC, 28040 Madrid, Spain

Unidad Asociada “Laboratorio de heteroestructuras con aplicación en espintrónica”, UCM/CSIC, Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain

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María Varela

María Varela

Facultad de Ciencias Físicas, Dpto. Física Aplicada III, Universidad Complutense de Madrid, GFMC, 28040 Madrid, Spain

Oak Ridge National Laboratory, Oak Ridge, TN, 37831 USA

Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain

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Mar García-Hernández

Mar García-Hernández

Instituto de Ciencia de Materiales de Madrid – Consejo Superior de Investigaciones Científicas (ICMM–CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain

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Carlos León

Carlos León

Facultad de Ciencias Físicas, Dpto. Física Aplicada III, Universidad Complutense de Madrid, GFMC, 28040 Madrid, Spain

Unidad Asociada “Laboratorio de heteroestructuras con aplicación en espintrónica”, UCM/CSIC, Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain

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Jacobo Santamaría

Jacobo Santamaría

Facultad de Ciencias Físicas, Dpto. Física Aplicada III, Universidad Complutense de Madrid, GFMC, 28040 Madrid, Spain

Unidad Asociada “Laboratorio de heteroestructuras con aplicación en espintrónica”, UCM/CSIC, Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain

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First published: 10 March 2016
Citations: 1

Abstract

This work reports on magnetocapacitance (MC) effects in epitaxial heterostructures of nominally 15 unit cells (u.c.) LaMnO3 (LMO) and 2 u.c. SrTiO3 (STO) with an alternating layer-repetition rate of 8: (LMO15/STO2)8. Epitaxial multilayer growth at high temperatures (900 °C) activates a selective inter-diffusion of La3+ and Sr2+ cations across the interfaces, which gives rise to Sr p-doping of the LMO and La n-doping of the STO layers. MC effects at the buried La1–xSrxMnO3/SrxLa1–xTiO3 (LSMO/SLTO) interfaces are probed by frequency, temperature and magnetic field dependent AC impedance spectroscopy. The technique is shown to be appropriate to account for the separate analysis of different resistance and capacitance contributions at the buried interfaces. As a result of the La/Sr inter-diffusion process, Schottky barriers are formed at the LSMO/SLTO interfaces, which give rise to massive MC of up to ≈ −200% in the out-of-plane film direction. The capacitance of the manganite-titanate LSMO/SLTO interfaces may be coupled indirectly to the resistance of the LSMO layers, because the Schottky space-charge layers and their capacitance can be modulated by varying the concentration of highly mobile charge carriers in the LSMO with a magnetic field.

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