Volume 19, Issue 44 2302072
Research Article

Si/Organic Integrated Narrowband Near-Infrared Photodetector

Zhuhua Xu

Zhuhua Xu

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055 China

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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Chuying Sun

Chuying Sun

Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077 China

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Siyi Min

Siyi Min

Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077 China

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Zilong Ye

Zilong Ye

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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Cong Zhao

Cong Zhao

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055 China

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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Jingzhou Li

Jingzhou Li

Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024 China

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Zhenghao Liu

Zhenghao Liu

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055 China

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Youdi Liu

Youdi Liu

Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802 USA

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Wen-Di Li

Corresponding Author

Wen-Di Li

Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077 China

E-mail: [email protected]; [email protected]; [email protected]; [email protected]

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Man-Chung Tang

Man-Chung Tang

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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Qinghua Song

Qinghua Song

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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H.Y. Fu

Corresponding Author

H.Y. Fu

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055 China

E-mail: [email protected]; [email protected]; [email protected]; [email protected]

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Feiyu Kang

Feiyu Kang

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055 China

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

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Jiangyu Li

Jiangyu Li

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055 China

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Yang Shen

Yang Shen

State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China

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Cunjiang Yu

Corresponding Author

Cunjiang Yu

Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802 USA

Department of Biomedical Engineering, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802 USA

E-mail: [email protected]; [email protected]; [email protected]; [email protected]

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Guodan Wei

Corresponding Author

Guodan Wei

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055 China

Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055 China

E-mail: [email protected]; [email protected]; [email protected]; [email protected]

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First published: 10 July 2023
Citations: 8

Abstract

Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

Research data are not shared.

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