The photoresponse of crystalline silicon strained via ultrasonic cavitation processing

(100)-oriented p -type silicon grown by the liquid-encapsulated Czochralski method was exposed to cavitation impacts to induce changes of the physical and structural properties of semiconductor. Optical and atomic force microscopy methods as well as X-ray diffraction, ellipsometry and photovoltage spectroscopy were used. By applying a high-intensity (15 W/cm²) and high-frequency (1 ÷ 6 MHz) sonication technique we successfully formed a dendrite-like micron-scale array on a silicon surface. It was found also a surprising improvement in the photoelectric properties of silicon samples exposed to the megasonic processing. Significant rise in value and expansion of the spectral range of photosensitivity take place after cavitation treatment. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)