Contributed Article
Peculiarities of defect generation under injection current in LEDs based on group-III nitride3N nanostructures
Abstract
It has been demonstrated that, along with well-known mechanisms of defect generation (DG) under injection current in fabricated UV- and commercial blue-LED chips based on A3N nanostructures, other defect generation mechanisms are possible in local regions. Aging experiments performed simultaneously with analysis of evolution of I-V characteristics at U < 2 V and spectral noise density dependences on current density, revealed DG with participation of multi-phonon recombination of carriers in an extended defect system and local regions of random alloy fluctuations enriched by metallic atoms (Ga or In). (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
