Analytical modelling and experimental verification of the three-dimensional current distribution on the top surface of silicon solar cells operating under concentrated sunlight

The approximation that the current is constant in any point of the emitter is not true for solar cells operating under concentrated sunlight. The transverse paths followed by photogenerated carriers to reach metal grid electrodes causes voltage drops leading to non-uniform distributed surface potential and a consequent reduction of the conversion efficiency. Moreover, concentrating lens often provide non-uniform light intensity thus worsening non-uniform current distribution. The correct design of surface geometry of the cell (metal grid, emitter depth, sheet resistance) should always take into account the above effects. Unfortunately a lack of reliable models still exists. In this paper we analytically solve the three-dimensional semiconductor equations with proper boundary conditions and taking into account, as source term, a distributed generation contribute. The reliability of the model has been tested by numerical simulations and experimentally verified with a lock-in thermography technique (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)