Si and Si-Ge wires for thermoelectrics

In this paper thermal conductivity of boron-doped Si and SiGe (3-5 at.% of germanium) whiskers has been measured by means of slightly modified 3ω -method in the range of 290-400 K. We have shown that obtained thermal conductivity temperature dependence of micron-scale whiskers agrees well with expected for bulk Si and SiGe with 3 to 5% of Ge content and at room temperature is equal to 150 and 100 Wm^-1K^-1respectively, which evidences the reliability of proposed modification of 3ω -method. Prospects of possible thermoelectric application of nanoscaled SiGe solid solutions have been considered. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)