The Fabrication of Wrinkle-Free Graphene Patterns on Ge(110) Substrate
Tianbo Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorPanlin Li
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorMin Gao
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorYalan Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorZengfeng Di
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
Zhongying Xue
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
Miao Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorTianbo Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorPanlin Li
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorMin Gao
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorYalan Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, No.19(A) Yuquan Road, Shijingshan District, Beijing, 100049 P. R. China
Search for more papers by this authorZengfeng Di
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
Zhongying Xue
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
Miao Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorThe data that support the findings of this study are available from the corresponding author upon reasonable request.
Abstract
A thermal expansion mismatch is inevitable for graphene grown on various substrates by chemical vapor deposition, which leads to the formation of wrinkles during post-growth cooling. Wrinkles can degrade the superior properties of graphene and increase device-to-device inconsistency. To address this issue, wrinkle-free graphene patterns are grown on Ge(110) substrate with the assistance of 5 × 1016 cm−2 Si ion implantation. The experimental data show that the wrinkle-free graphene can grow on unimplanted areas, whereas no graphene is synthesized on Si ion implanted areas. Further research shows that the wrinkle-free nature of graphene is closely related to the compressive strain distribution in graphene. The compressive strain in graphene is increased to a significant extent with an increase in the size of graphene patterns. When the compressive strain energy exceeds the wrinkle-formation barrier, wrinkles emerge on the graphene, and the compressive strain decreases as a consequence. This research may help to understand the formation mechanisms of graphene wrinkles and promote the growth of wrinkle-free graphene.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Supporting Information
| Filename | Description |
|---|---|
| pssb202000560-sup-0001-SuppData-S1.docx1.7 MB | Supplementary Material |
Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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