Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths

Su Jin Kim,

Su Jin Kim

School of Electronics Engineering, Korea University, Anam-Dong 5-Ga, Seongbuk-Gu, 136-701 Seoul, Korea

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Tae Geun Kim,

Corresponding Author

Tae Geun Kim

School of Electronics Engineering, Korea University, Anam-Dong 5-Ga, Seongbuk-Gu, 136-701 Seoul, Korea

Corresponding author: e-mail [email protected], Phone: +82 2 3290 3255, Fax: +82 2 924 5119Search for more papers by this author

Su Jin Kim,

Su Jin Kim

School of Electronics Engineering, Korea University, Anam-Dong 5-Ga, Seongbuk-Gu, 136-701 Seoul, Korea

Search for more papers by this author

Tae Geun Kim,

Corresponding Author

Tae Geun Kim

School of Electronics Engineering, Korea University, Anam-Dong 5-Ga, Seongbuk-Gu, 136-701 Seoul, Korea

Corresponding author: e-mail [email protected], Phone: +82 2 3290 3255, Fax: +82 2 924 5119Search for more papers by this author

First published: 05 December 2013

https://doi.org/10.1002/pssa.201330258

Citations: 22

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Abstract

In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is proposed and numerically investigated using SimuLED software. By step-increasing the thickness of the quantum wells and step-decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV-LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.

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Volume211, Issue3

March 2014

Pages 656-660

Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths

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Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths

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