Silicon carbonitride SiCN:H thin films are deposited with microwave plasma-enhanced chemical vapor deposition. Argon, ammonia, and tetramethylsilane (TMS) (Ar/NH₃/Si(CH₃)₄) are used for the gas mixture. Plasma gas phase chemistry is studied using optical emission spectroscopy according to the TMS/NH₃ gas flow ratio, highlighting the presence of three discharge regimes. Then, the deposited SiCN:H thin films are analyzed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy, enabling us to correlate plasma and film chemistry. Thus, we define three thin film families corresponding to the three discharge regimes occurring in the plasma phase. Properties of these families are studied: Optical properties by spectroscopic ellipsometry, electrical properties by I–V measurements and electron spin resonance, and mechanical properties by nanoindentation and tribology.

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Volume17, Issue1

January 2020

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SiCN:H thin films deposited by MW-PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits

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SiCN:H thin films deposited by MW-PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits

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