Impact of bilayer structures on the surface passivation quality of high-rate-sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells
Faris Akira Bin Mohd Zulkifly
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorYuta Shiratori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorKazuyoshi Nakada
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorCorresponding Author
Shinsuke Miyajima
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Correspondence
Shinsuke Miyajima, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan.
Email: [email protected]
Search for more papers by this authorFaris Akira Bin Mohd Zulkifly
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorYuta Shiratori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorKazuyoshi Nakada
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Search for more papers by this authorCorresponding Author
Shinsuke Miyajima
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550 Japan
Correspondence
Shinsuke Miyajima, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan.
Email: [email protected]
Search for more papers by this authorFaris Akira Bin Mohd Zulkifly and Yuta Shiratori contributed equally to this work.
Abstract
Crystalline silicon surface passivation effect of intrinsic hydrogenated amorphous silicon (i-a-Si:H) films deposited by radio-frequency facing target sputtering (RF-FTS) using a two-step deposition technique was investigated. In the two-step deposition technique, an i-a-Si:H layer was deposited at a high sputtering power condition after the deposition of i-a-Si:H at a low sputtering power condition. The two-step deposition technique drastically improved the passivation quality of i-a-Si:H compared with a conventional single-step deposition technique. Only 0.5-nm-thick i-a-Si:H deposited at a low sputtering power suppresses the initial sputtering damage to the crystalline silicon surface. A high average deposition rate of 14.1 nm/min was also achieved. A non-textured silicon heterojunction solar cell using an i-a-Si:H passivation layer deposited by the two-step method shows a conversion efficiency of 17.4% (Voc = 0.679 V, Jsc = 35.0 mA/cm2, FF = 0.732).
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