Volume 31, Issue 11 pp. 1428-1438
Full Paper

New Core-Expanded Naphthalene Diimides for n-Channel Organic Thin Film Transistors

Yunbin Hu

Yunbin Hu

Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, China

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Zhongli Wang

Zhongli Wang

Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, China

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Xu Zhang

Xu Zhang

Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China

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Xiaodi Yang

Xiaodi Yang

Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China

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Hongxiang Li

Hongxiang Li

Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, China

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Xike Gao

Corresponding Author

Xike Gao

Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, China

Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, China, Tel.: 0086-021-54925072; Fax: 0086-021-64166128Search for more papers by this author
First published: 02 October 2013
Citations: 12

Abstract

Four classes of core-expanded naphthalene diimides (1a, 1b, 2a, 2b, 3 and 4) that bear different electron-deficient sulfur heterocycles were designed and synthesized. The solution-processed thin films of 1a, 2a, 3 and 4 operated well in air as n-channel organic transistors with electron mobility ranging from ∼10−6 to 0.14 cm2/Vs, depending on the different conjugated backbones. The thin film microstructure studies were also carried out to understand the variations of the electron mobility for thin films of 1a, 2a, 3 and 4.

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