Volume 36, Issue 4 pp. 1215-1220
Article

Synthesis and Physical Properties of Asymmetrical Quaterthiophene Derivatives as Organic Thin-Film Transistor Materials

Baji Shaik

Baji Shaik

Department of Chemistry, Research Institute of Natural Science (RINS), Graduate School for Molecular Materials and Nanochemistry, Gyeongsang National University, Jinju, 660-701 Korea

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Young Ri Noh

Young Ri Noh

Department of Chemistry, Research Institute of Natural Science (RINS), Graduate School for Molecular Materials and Nanochemistry, Gyeongsang National University, Jinju, 660-701 Korea

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Ho June Choi

Ho June Choi

Department of Chemistry, Research Institute of Natural Science (RINS), Graduate School for Molecular Materials and Nanochemistry, Gyeongsang National University, Jinju, 660-701 Korea

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Soon Byung Yoon

Soon Byung Yoon

Department of Chemistry, Research Institute of Natural Science (RINS), Graduate School for Molecular Materials and Nanochemistry, Gyeongsang National University, Jinju, 660-701 Korea

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Myoung Hee Yun

Myoung Hee Yun

Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 Korea

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Jin Young Kim

Jin Young Kim

Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 Korea

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Sang-Gyeong Lee

Corresponding Author

Sang-Gyeong Lee

Department of Chemistry, Research Institute of Natural Science (RINS), Graduate School for Molecular Materials and Nanochemistry, Gyeongsang National University, Jinju, 660-701 Korea

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First published: 25 March 2015
Citations: 2

Abstract

We report here, synthesis, physical, thermal, and optoelectronic properties of compounds containing anthracene, anthraquinone, and 11,11,12,12-tetracyano-9,10-anthraquinodimethane units connected to quaterthiophene units. Three compounds, TQAO (6), TQAN (7), and TQAM (8) are synthesized by using Stille coupling, reduction, and Knoevenagel condensation reactions. These compounds were thermally stable and exhibited organic thin-film transistor (OTFT) properties. Among them, TQAM (8)-based OTFT has shown ambipolar mobility, both hole and electron mobility of 2.0 × 10−6 and 2.43 × 10−7 cm2/Vs, respectively. TQAO (6) and TQAN (7) has shown low electron mobility of 5.58 × 10−6 and 1.22 × 10−5 cm2/Vs, respectively.

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