One-Step Synthesis of Bismuth Telluride Nanosheets of a Few Quintuple Layers in Thickness†
Dr. Yimin Zhao
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
Search for more papers by this authorDr. Robert W. Hughes
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
Search for more papers by this authorDr. Zixue Su
EaStCHEM, School of Chemistry, University of St Andrews, St Andrews, Fife KY16 9ST (UK)
Search for more papers by this authorProf. Wuzong Zhou
EaStCHEM, School of Chemistry, University of St Andrews, St Andrews, Fife KY16 9ST (UK)
Search for more papers by this authorCorresponding Author
Prof. Duncan H. Gregory
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)Search for more papers by this authorDr. Yimin Zhao
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
Search for more papers by this authorDr. Robert W. Hughes
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
Search for more papers by this authorDr. Zixue Su
EaStCHEM, School of Chemistry, University of St Andrews, St Andrews, Fife KY16 9ST (UK)
Search for more papers by this authorProf. Wuzong Zhou
EaStCHEM, School of Chemistry, University of St Andrews, St Andrews, Fife KY16 9ST (UK)
Search for more papers by this authorCorresponding Author
Prof. Duncan H. Gregory
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)
WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (UK)Search for more papers by this authorD.H.G. thanks the EPSRC and Dstl for funding this work under grant EP/H020543/1. The authors thank EPSRC’s support for the free access to the TEM/SEM facility at the University of St. Andrews and acknowledge use of the EPSRC’s Chemical Database Service (ICSD).
Graphical Abstract
Bi2Te3-Nanoschichten wurden durch oberflächenunterstützten chemischen Dampftransport auf Si-Trägern synthetisiert. Die zerknüllten Bi2Te3-Schichten wachsen in der Basalebene der hexagonalen Struktur und weisen typische Dicken von ≤3 nm auf (siehe Bild; Te violett, Bi grün). Raman-Studien zeigen, dass zur Auslenkung entlang der c-Achse gehörende Moden, die im Festkörper inaktiv sind, in den Bi2Te3-Schichten aktiv werden.
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References
- 1A. K. Geim, K. S. Novoselov, Nat. Phys. 2007, 6, 183–191.
- 2W. P. McCray, Nat. Nanotechnol. 2007, 2, 259–261.
- 3K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666–669.
- 4J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. J. Booth, S. Roth, Nature 2007, 446, 60–63.
- 5H. S. S. R. Matte, A. Gomathi, A. K. Manna, D. J. Late, R. Datra, S. K. Pati, C. N. R. Rao, Angew. Chem. 2010, 122, 4153–4156;
10.1002/ange.201000009 Google ScholarAngew. Chem. Int. Ed. 2010, 49, 4059–4062.
- 6D. Pacilé, J. C. Meyer, C. O. Girit, A. Zettl, Appl. Phys. Lett. 2008, 92, 133107.
- 7J. Kotakoski, C. H. Jin, O. Lehtinen, K. Suenaga, A. V. Krasheninnikov, Phys. Rev. B 2010, 82, 113404.
- 8K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, A. K. Geim, Proc. Natl. Acad. Sci. USA 2005, 102, 10451–10453.
- 9C. B. Satterthwaite, R. W. Ure, Phys. Rev. 1957, 108, 1164–1170.
- 10D. A. Wright, Nature 1958, 181, 834–834.
- 11L. D. Hicks, M. S. Dresselhaus, Phys. Rev. B 1993, 47, 12727–12731.
- 12D. Teweldebrhan, V. Goyal, A. A. Balandin, Nano Lett. 2010, 10, 1209–1218.
- 13D. Teweldebrhan, V. Goyal, M. Rahman, A. A. Balandin, Appl. Phys. Lett. 2010, 96, 053107.
- 14V. Goyal, D. Teweldebrhan, A. A. Balandin, Appl. Phys. Lett. 2010, 97, 133117.
- 15M. Z. Hossain, S. L. Rumyantsev, K. M. F. Shahil, D. Teweldebrhan, M. Shur, A. A. Balandin, ACS Nano 2011, 5, 2657–2663.
- 16D. S. Kong, W. H. Dang, J. J. Cha, H. Li, S. Meister, H. Peng, Z. F. Liu, Y. Cui, Nano Lett. 2010, 10, 2245–2250.
- 17C. W. Dunnill, H. K. Edwards, P. D. Brown, D. H. Gregory, Angew. Chem. 2006, 118, 7218–7221;
10.1002/ange.200602614 Google ScholarAngew. Chem. Int. Ed. 2006, 45, 7060–7063.
- 18H. M. Rietveld, J. Appl. Crystallogr. 1969, 2, 65–71.
- 19X. Y. Kong, Y. Ding, R. Yang, Z. L. Wang, Science 2004, 303, 1348–1351.
- 20W. Z. Zhou, A. I. Kirkland, A. Porch, K. D. Mackay, A. R. Armstrong, M. R. Harrison, D. A. Jefferson, P. P. Edwards, W. Y. Liang, Angew. Chem. 1989, 101, 830–833; Angew. Chem. Int. Ed. Engl. 1989, 28, 810–813.
- 21K. M. F. Shahil, M. Z. Hossain, D. Teweldebrhan, A. A. Balandin, Appl. Phys. Lett. 2010, 96, 153103.
- 22W. Richter, H. Kouhler, C. R. Becker, Phys. Status Solidi B 1977, 84, 619–628.
- 23J. M. Friedman, R. M. Hochstrasser, J. Am. Chem. Soc. 1976, 98, 4043–4048.
- 24P. Y. Yu, M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, 3rd ed. Springer, Heidelberg, 2005.
10.1007/b137661 Google Scholar
- 25S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, Phys. Rev. B 2004, 69, 085313.
- 26Y. Tong, F. Yi, L. Liu, P. Zhai, Q. Zhang, Physica B 2010, 405, 3190–3194.
- 27A. C. Larson, R. B. von Dreele, The General Structure Analysis System, 2000, Los Alamos National Laboratories, Los Alamos.
- 28B. H. Toby, J. Appl. Crystallogr. 2001, 34, 210–213.
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