GaAs(001): Surface Structure and Optical Properties
W.G. Schmidt
Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for more papers by this authorF. Bechstedt
Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for more papers by this authorK. Fleischer
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorC. Cobet
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorN. Esser
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorW. Richter
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorJ. Bernholc
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, USA
Search for more papers by this authorG. Onida
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica dell' Università di Roma Tor Vergata, Via della Ricerca Scientifica, I-00133 Roma, Italy
Search for more papers by this authorW.G. Schmidt
Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for more papers by this authorF. Bechstedt
Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for more papers by this authorK. Fleischer
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorC. Cobet
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorN. Esser
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorW. Richter
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Search for more papers by this authorJ. Bernholc
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, USA
Search for more papers by this authorG. Onida
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica dell' Università di Roma Tor Vergata, Via della Ricerca Scientifica, I-00133 Roma, Italy
Search for more papers by this authorAbstract
The optical anisotropy of differently reconstructed GaAs(001) surfaces has been analysed both theoretically and experimentally. The atomic structures and RAS spectra are calculated from first principles for the As-rich c(4 × 4) and β2(2 × 4) as well as for the stoichiometric α2(2 × 4) and the Ga-rich ζ(4 × 2) surface phases. These results are compared with spectra recorded at low temperature (40 K). We find good agreement between the calculated and measured data, in particular for the As-rich surface phases. In marked contrast to earlier calculations we find the peak near the E1 critical point energy, characteristic of the β2(2 × 4) surface, to originate from electronic transitions in bulk layers. The experimental data for the Ga-rich (4 × 2) surface phase are less well reproduced, possibly due to surface defects or structural deviations from the ζ(4 × 2) model for the surface geometry.
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