Volume 42, Issue 9 pp. 997-1003
Concise Report

Thermoelectric Properties of an Indandione-Terminated Quinoidal Compound: Effect of the n-Type Dopants

Yingying Liu

Yingying Liu

School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072 China

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Cheng Wang

Cheng Wang

School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072 China

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Tianzuo Wang

Tianzuo Wang

School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072 China

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Fei Jiao

Fei Jiao

Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072 China

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Shaoqiang Dong

Corresponding Author

Shaoqiang Dong

Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072 China

*E-mail: [email protected]; [email protected]Search for more papers by this author
Yunfeng Deng

Corresponding Author

Yunfeng Deng

School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072 China

Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, Fujian, 350207 China

*E-mail: [email protected]; [email protected]Search for more papers by this author
Yanhou Geng

Yanhou Geng

School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072 China

Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, Fujian, 350207 China

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First published: 18 January 2024
Citations: 5

Dedicated to the Special Issue of Emerging Investigators in 2023.

Comprehensive Summary

The investigation of n-type doping holds a significant interest for the application of thermoelectrics. Herein, the doping of an indandione-terminated compound Q-4F with a singlet open-shell ground state was studied using two n-dopants N-DMBI and LCV. Both of these two dopants can effectively dope Q-4F due to the large offset between the singly occupied molecular orbital (SOMO) of dopants and the lowest unoccupied molecular orbital (LUMO) of Q-4F. N-DMBI has a higher doping ability than LCV as demonstrated by the UV-vis-NIR and EPR measurements. However, in comparison to N-DMBI doped Q-4F, LCV doped system exhibits much higher electrical conductivity and power factor due to its unperturbed molecular packing and favorable morphology after doping. The optimal conductivity of LCV doped Q-4F is 7.16 × 10–2 ± 0.16 S·cm–1 and the highest power factor reaches 12.3 ± 0.85 μW·m–1·K–2. These results demonstrate that the modulation of n-dopants is a powerful strategy to balance the doping efficiency and microstructure toward a maximum thermoelectric performance.image

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