Volume 3, Issue 4 pp. 960-963
Original Paper

Oxygen in sputter-deposited ZnTe thin films

S. Merita

Corresponding Author

S. Merita

I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

Phone: +49 641 99 33 106, Fax: +49 641 99 33 109Search for more papers by this author
T. Krämer

T. Krämer

I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

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B. Mogwitz

B. Mogwitz

Physikalisch-Chemisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 58, 35392 Gießen, Germany

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B. Franz

B. Franz

Physikalisch-Chemisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 58, 35392 Gießen, Germany

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A. Polity

A. Polity

I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

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B. K. Meyer

B. K. Meyer

I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

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First published: 07 March 2006
Citations: 17

Abstract

Bandgap-bowing has been observed in many of the zinc-group-VI compounds, when the anion is substituted with an isovalent element. Recently new results on the ZnO1–xSx and ZnO1–xSex system have been presented, but so far only one report on ZnO1–xTex is known. We examine the possibility of substituting tellurium by oxygen in sputter-deposited polycrystalline ZnTe thin-films and the effects on bandgap energy and crystal structure. A first approximation of the bowing curve with a lower limit of the bowing parameter of 2.7 eV is performed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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