Chapter 19
Buried Channels in Monolithic Si
Kazusuke Maenaka,
Kazusuke Maenaka
University of Hyogo, Department of Electronics and Computer Science, Graduate School of Engineering, 2167 Shosha, Himeji, 671–2280 Japan
Search for more papers by this authorKazusuke Maenaka,
Kazusuke Maenaka
University of Hyogo, Department of Electronics and Computer Science, Graduate School of Engineering, 2167 Shosha, Himeji, 671–2280 Japan
Search for more papers by this authorBook Editor(s):Masayoshi Esashi,
Masayoshi Esashi
Search for more papers by this authorFirst published: 23 April 2021
Summary
A micro-electro mechanical system (MEMS) technology has been developed with the integrated circuit (IC) technology. Buried channels in large-scale integration will first be described before the buried channel in MEMS. The buried channel can be vacuum sealed, and wafers with the silicon on nothing (SON) structure can be the starting material for IC. Many types of practical MEMS devices, especially sensors, can be designed based on the fabrication process. The SON is especially useful for applications of pressure sensors because the basic structure involving a diaphragm with a vacuum cavity is directly applicable to the pressure-sensing mechanism. The chapter discusses the concept and the applications of silicon monolithic buried cavity or channel in the MEMS technology utilizing hydrogen annealing. The SON technology can be realized using simple process steps: only one lithography with etching and hydrogen annealing.
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