Si(111)/B Surface Reconstruction and Related Phenomena
Jianlin Chang
Department of Physics, Queen's University, Kingston, Ontario K7L 3N6, Canada
Search for more papers by this authorM. J. Stott
Department of Physics, Queen's University, Kingston, Ontario K7L 3N6, Canada
Search for more papers by this authorJianlin Chang
Department of Physics, Queen's University, Kingston, Ontario K7L 3N6, Canada
Search for more papers by this authorM. J. Stott
Department of Physics, Queen's University, Kingston, Ontario K7L 3N6, Canada
Search for more papers by this authorAbstract
The results of ab initio pseudopotential calculations of various aspects of Si(111) surface with adsorbed B and other group III impurities are reported. The reconstruction of the surface due to adsorbed group III impurities is studied along with the surface core level shifts of the Si(111)/B system. Si epitaxial growth on Si(111)/B surface and the possible formation of a δ-doped layer are also examined.
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