Volume 14, Issue 1 1702433
Review

Perovskite Quantum Dots and Their Application in Light-Emitting Diodes

Hung-Chia Wang

Hung-Chia Wang

Department of Chemistry, National Taiwan University, Taipei, 106 Taiwan

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Zhen Bao

Zhen Bao

Department of Chemistry, National Taiwan University, Taipei, 106 Taiwan

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Hsin-Yu Tsai

Hsin-Yu Tsai

Department of Chemistry, National Taiwan University, Taipei, 106 Taiwan

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An-Cih Tang

An-Cih Tang

Department of Chemistry, National Taiwan University, Taipei, 106 Taiwan

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Ru-Shi Liu

Corresponding Author

Ru-Shi Liu

Department of Chemistry, National Taiwan University, Taipei, 106 Taiwan

Department of Mechanical Engineering and Graduate, Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, 106 Taiwan

E-mail: [email protected]Search for more papers by this author
First published: 30 November 2017
Citations: 268

Abstract

Perovskite quantum dots (PQDs) attract significant interest in recent years because of their unique optical properties, such as tunable wavelength, narrow emission, and high photoluminescence quantum efficiency (PLQY). Recent studies report new types of formamidinium (FA) PbBr3 PQDs, PQDs with organic–inorganic mixed cations, divalent cation doped colloidal CsPb1−xMxBr3 PQDs (M = Sn2+, Cd2+, Zn2+, Mn2+) featuring partial cation exchange, and heterovalent cation doped into PQDs (Bi3+). These PQD analogs open new possibilities for optoelectronic devices. For commercial applications in lighting and backlight displays, stability of PQDs requires further improvement to prevent their degradation by temperature, oxygen, moisture, and light. Oxygen and moisture-facilitated ion migration may easily etch unstable PQDs. Easy ion migration may result in crystal growth, which lowers PLQY of PQDs. Surface coating and treatment are important procedures for overcoming such factors. In this study, new types of PQDs and a strategy of improving their stabilities are introduced. Finally, this paper discusses future applications of PQDs in light-emitting diodes.

Conflict of Interest

The authors declare no conflict of interest.

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