The phase-change memory (PCM) technology is one of the most studied emerging technologies for both the stand-alone and embedded memory markets. It is based on the peculiar properties of a chalcogenide material, able to make reversible transitions between a poly-crystalline, high conductivity phase, and an amorphous, high resistivity phase, thus enabling the storage of the logical bit. PCM allows for an analog-oriented storage as well, opening the way to an employment on inference for AI applications. The research on PCM began in the late 1960s, driven by the pioneering work of Stanford Ovshinsky, who discovered the threshold and memory switching effects in amorphous materials. An overview of the early work, the cell and array demonstrators all the way to more recent implementations of PCM proves the depth of the research done on this technology. The implementation of different cell architectures and the research on the core material represent the key points for PCM development.

Conflict of Interest

The authors declare no conflict of interest.

References

1D. Frohman-Bentchkowsky, in 1971 IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, Vol. XIV, Philadelphia, PA, USA 1971, pp. 80–81.
Google Scholar
2H.-S. P. Wong, S. Salahuddin, Nat. Nanotechnol. 2015, 10, 191.
10.1038/nnano.2015.29
CAS PubMed Web of Science® Google Scholar
3R. Bez, E. Camerlenghi, A. Modelli, A. Visconti, Proc. IEEE 2003, 91, 489.
10.1109/JPROC.2003.811702
Web of Science® Google Scholar
4H. Iizuka, F. Masuoka, T. Sato, M. Ishikawa, IEEE Trans. Electron Devices 1976, 23, 379.
10.1109/T-ED.1976.18415
Web of Science® Google Scholar
5F. Masuoka, M. Asano, H. Iwahashi, T. Komuro, S. Tanaka, in 1984 Int. Electron Devices Meeting San Francisco, CA, USA 1984, pp. 464–467.
Google Scholar
6S. Lai, in Int. Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 1998,San Francisco, CA, USA, pp. 971–973.
Google Scholar
7S. Yu, T.-H. Kim, Computer 2024, 57, 150.
10.1109/MC.2024.3363269
Web of Science® Google Scholar
8D. U. Lee, K. W. Kim, K. W. Kim, H. Kim, J. Y. Kim, Y. J. Park, J. H. Kim, D. S. Kim, H. B. Park, J. W. Shin, J. H. Cho, K. H. Kwon, M. J. Kim, J. Lee, K. W. Park, B. Chung, S. Hong, in 2014 IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers (ISSCC) San Francisco, CA, USA 2014, pp. 432–433.
Google Scholar
9S. Mukherjee, T. Chang, R. Pang, M. Knecht, D. Hu, in 1985 Int. Electron Devices Meeting, Washington, DC, USA 1985, pp. 616–619.
Google Scholar
10F. Masuoka, M. Momodomi, Y. Iwata, R. Shirota, in 1987 Int. Electron Devices Meeting, Washington, DC, USA 1987, pp. 552–555.
Google Scholar
11M. A. Lantz, S. Furrer, M. Petermann, H. Rothuizen, S. Brach, L. Kronig, I. Iliadis, B. Weiss, E. R. Childers, D. Pease, ACM Trans. Storage 2025, 21, 1.
10.1145/3708997
Web of Science® Google Scholar
12C. Kuo, T. Toms, M. Weidner, H. Choe, D. Shum, K.-M. Chang, P. Smith, in Proc. 4th Int. Conf. Solid-State and IC Technology, Beijing, China 1995, pp. 138–140.
Google Scholar
13B. Chen, J. Wan, A. Celesti, D. Li, H. Abbas, Q. Zhang, IEEE Commun. Mag. 2018, 56, 103.
10.1109/MCOM.2018.1701231
Web of Science® Google Scholar
14S. U. Amin, M. S. Hossain, IEEE Access 2021, 9, 45.
10.1109/ACCESS.2020.3045115
Web of Science® Google Scholar
15T. Yamauchi, Y. Yamaguchi, T. Kono, H. Hidaka, in 2016 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2016, pp. 28.6.1–28.6.4.
Google Scholar
16H. Hidaka, in IEEE Int. Conf. IC Design and Technology, Kaohsiung, Taiwan 2011, pp. 1–4.
Google Scholar
17W. Shi, S. Dustdar, Computer 2016, 49, 78.
10.1109/MC.2016.145
Web of Science® Google Scholar
18S. S. Iyer, V. Roychowdhury, Science 2023, 382, 263.
10.1126/science.adk6874
CAS PubMed Web of Science® Google Scholar
19Y. Li, IEEE Solid-State Circuits Mag. 2020, 12, 56.
10.1109/MSSC.2020.3021841
CAS Google Scholar
20A. Goda, Electronics 2021, 10, 24.
10.3390/electronics10243156
Web of Science® Google Scholar
21R. Richter, M. Trentzsch, S. Dünkel, J. Müller, P. Moll, B. Bayha, K. Mothes, A. Henke, M. Mazur, J. Paul, P. Krottenthaler, J. Poth, S. Jansen, R. Hüselitz, H. Kim, A. Zaka, T. Herrmann, E. Bazizi, S. Beyer, P. Ghazavi, H. Om'mani, S. Lemke, Y. Tkachev, F. Zhou, J. Kim, X. Liu, V. Tiwari, N. Do, in 2018 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2018, pp. 18.5.1–18.5.4.
Google Scholar
22P. Zuliani, A. Conte, P. Cappelletti, in 2019 Symp. VLSI Technology, Kyoto, Japan 2019, pp. T192–T193.
Google Scholar
23C. H. Lam, in 2010 10th IEEE Int. Conf. Solid-State and Integrated Circuit Technology, Shanghai, China 2010, pp. 1080–1083.
Google Scholar
24S. W. Fong, C. M. Neumann, H.-S. P. Wong, IEEE Trans. Electron Devices 2017, 64, 4374.
10.1109/TED.2017.2746342
CAS Web of Science® Google Scholar
25F. Arnaud, P. Ferreira, F. Piazza, A. , P. Zuliani, P. Mattavelli, E. Gomiero, G. Samanni, J. Jasse, C. Jahan, J. P. Reynard, R. Berthelon, O. Weber, A. Villaret, B. Dumont, J. C. Grenier, R. Ranica, C. Gallon, C. Boccaccio, A. Souhaite, L. Desvoivres, D. Ristoiu, L. Favennec, V. Caubet, S. Delmedico, N. Cherault, R. Beneyton, S. Chouteau, P. O. Sassoulas, L. Clement, et al., 2020 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2020, pp. 24.2.1–24.2.4.
Google Scholar
26S. Ko, J. H. Park, J. H. Bak, H. Jung, J. Shim, D. S. Kim, W. Lim, D.-E. Jeong, J. H. Lee, K. Lee, J.-H. Park, Y. Kim, C. Kim, J. H. Jeong, C. Y. Lee, S. H. Han, Y. Ji, S. H. Hwang, H. J. Shin, K. Lee, Y. J. Song, Y. G. Shin, J. H. Song, in 2023 IEEE Symp. VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan 2023, pp. 1–2.
Google Scholar
27C.-Y. Wu, C.-F. Yang, C.-W. Lai, Y.-T. Wu, T.-C. Chien, M.-H. Yang, M.-T. Yang, Y.-N. Kao, C.-L. Cheng, C.-Y. Wang, H. W. Tseng, Y.-D. Chih, W.-T. Chu, A. Hung, W. H. Chuang, in 2023 Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2023, pp. 1–4.
Google Scholar
28F. Arnaud, P. Zuliani, J. Reynard, A. , F. Disegni, P. Mattavelli, E. Gomiero, G. Samanni, C. Jahan, R. Berthelon, O. Weber, E. Richard, V. Barral, A. Villaret, S. Kohler, J. Grenier, R. Ranica, C. Gallon, A. Souhaite, D. Ristoiu, L. Favennec, V. Caubet, S. Delmedico, N. Cherault, R. Beneyton, S. Chouteau, P. Sassoulas, A. Vernhet, Y. Le Friec, F. Domengie, et al., 2018 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2018, pp. 18.4.1–18.4.4.
Google Scholar
29M. Boniardi, M. Baldo, M. Allegra, A. Redaelli, Adv. Electron. Mater. 2024, 10, 2400599.
10.1002/aelm.202400599
CAS Web of Science® Google Scholar
30S. Ovshinsky, US Patent 3271591, 1966.
Google Scholar
31K. Büer, J. Non-Cryst. Solids 1970, 2, 444.
10.1016/0022-3093(70)90159-6
Google Scholar
32S. R. Ovshinsky, Phys. Rev. Lett. 1968, 21, 1450.
10.1103/PhysRevLett.21.1450
Web of Science® Google Scholar
33D. Adler, M. S. Shur, M. Silver, S. R. Ovshinsky, J. Appl. Phys. 1980, 51, 3289.
10.1063/1.328036
CAS Web of Science® Google Scholar
34A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez, IEEE Trans. Electron Devices 2004, 51, 452.
10.1109/TED.2003.823243
Web of Science® Google Scholar
35D. Ielmini, Y. Zhang, J. Appl. Phys. 2007, 102, 054517.
10.1063/1.2773688
CAS Web of Science® Google Scholar
36A. Redaelli, A. Pirovano, A. Benvenuti, A. L. Lacaita, J. Appl. Phys. 2008, 103, 111101.
10.1063/1.2931951
CAS Web of Science® Google Scholar
37N. F. Mott, Philos. Mag. 1969, 19, 835.
10.1080/14786436908216338
CAS Web of Science® Google Scholar
38A. Owen, J. Robertson, IEEE Trans. Electron Devices 1973, 20, 105.
10.1109/T-ED.1973.17617
CAS Web of Science® Google Scholar
39R. M. Hill, Philos. Mag. 1971, 24, 1307.
10.1080/14786437108217414
CAS Web of Science® Google Scholar
40H. Fritzsche, S. Ovshinsky, J. Non-Cryst. Solids 1970, 2, 393.
10.1016/0022-3093(70)90156-0
CAS Google Scholar
41H. Fritzsche, IBM J. Res. Dev. 1969, 13, 515.
10.1147/rd.135.0515
CAS Web of Science® Google Scholar
42S. Ovshinsky, H. Fritzsche, IEEE Trans. Electron Devices 1973, 20, 91.
10.1109/T-ED.1973.17616
CAS Web of Science® Google Scholar
43M. Lankhorst, J. Non-Cryst. Solids 2002, 297, 210.
10.1016/S0022-3093(01)01034-1
CAS Web of Science® Google Scholar
44L. Crespi, A. Ghetti, M. Boniardi, A. L. Lacaita, IEEE Electron Device Lett. 2014, 35, 747.
10.1109/LED.2014.2320967
Web of Science® Google Scholar
45N. Yamada, E. Ohno, N. Akahira, K. Nishiuchi, K. Nagata, M. Takao, Jpn. J. Appl. Phys. 1987, 26, 61.
10.7567/JJAPS.26S4.61
Web of Science® Google Scholar
46T. Matsunaga, N. Yamada, Phys. Rev. B 2004, 69, 104111.
10.1103/PhysRevB.69.104111
CAS Web of Science® Google Scholar
47M. Wuttig, N. Yamada, Nat. Mater. 2007, 6, 824.
10.1038/nmat2009
CAS PubMed Web of Science® Google Scholar
48S. Raoux, W. Weßnic, D. Ielmini, Chem. Rev. 2010, 110, 240.
10.1021/cr900040x
CAS PubMed Web of Science® Google Scholar
49R. O. Jones, Solid State Sci. 2024, 152, 107524.
10.1016/j.solidstatesciences.2024.107524
CAS Web of Science® Google Scholar
50T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, R. Kojima, Nat. Mater. 2011, 10, 129.
10.1038/nmat2931
CAS PubMed Web of Science® Google Scholar
51J. Akola, R. O. Jones, Phys. Rev. B 2007, 76, 235201.
10.1103/PhysRevB.76.235201
CAS Web of Science® Google Scholar
52R. G. Neale, D. L. Nelson, G. E. Moore, Electronics 1970, 43, 56.
Web of Science® Google Scholar
53A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, R. Bez, in IEEE Int. Electron Devices Meeting 2003 , IEEE, Washington, DC 2003 pp. 29.6.1–29.6.4.
Google Scholar
54S. Lai, in IEEE Int. Electron Devices Meeting 2003, Washington, DC, USA, pp. 10.1.1–10.1.4.
Google Scholar
55A. L. Lacaita, A. Redaelli, Microelectron. Eng. 2013, 109, 351.
10.1016/j.mee.2013.02.105
CAS Web of Science® Google Scholar
56S. Lai, T. Lowrey, in Int. Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), Washington, DC, USA 2001, pp. 36.5.1–36.5.4.
Google Scholar
57Y. Hwang, J. Hong, S. Lee, S. Ahn, G. Jeong, G. Koh, J. Oh, H. Kim, W. Jeong, S. Lee, J. Park, K. Ryoo, H. Horii, Y. Ha, J. Yi, W. Cho, Y. Kim, K. Lee, S. Joo, S. Park, U. Chung, H. Jeong, K. Kim, in 2003 Symp. VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), Kyoto, Japan 2003, pp. 173–174.
Google Scholar
58Y. Hwang, S. Lee, S. Ahn, S. Lee, K. Ryoo, H. Hong, H. Koo, F. Yeung, J. Oh, H. Kim, W. Jeong, J. Park, H. Horii, Y. Ha, J. Yi, G. Koh, G. Jeong, H. Jeong, K. Kim, in IEEE Int. Electron Devices Meeting 2003, Washington, DC, USA, pp. 37.1.1–37.1.4.
Google Scholar
59F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, A. Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Morandi, R. Piva, A. Spandre, R. Zonca, A. Modelli, E. Varesi, T. Lowrey, A. Lacaita, G. Casagrande, P. Cappelletti, R. Bez, in Digest Technical Papers. 2004 Symp. VLSI Technology, 2004, Honolulu, HI, USA, pp. 18–19.
Google Scholar
60A. Pirovano, F. Pellizzer, A. Redaelli, I. Tortorelli, E. Varesi, F. Ottogalli, M. Tosi, P. Besana, R. Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, A. Modelli, D. Ielmini, A. Lacaita, R. Bez, in Proc. 35th European Solid-State Device Research Conf., 2005. ESSDERC 2005 , Grenoble, France, pp. 313–316.
Google Scholar
61F. Bedeschi, C. Resta, O. Khouri, E. Buda, L. Costa, M. Ferraro, F. Pellizzer, F. Ottogalli, A. Pirovano, M. Tosi, R. Bez, R. Gastaldi, G. Casagrande, in 2004 Symp. VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), Honolulu, HI, USA 2004, pp. 442–445.
Google Scholar
62W. Y. Cho, B.-H. Cho, B.-G. Choi, H.-R. Oh, S. Kang, K.-S. Kim, K.-H. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, Y. Hwang, S. Ahn, G.-H. Koh, G. Jeong, H. Jeong, K. Kim, IEEE J. Solid-State Circuits 2005, 40, 293.
10.1109/JSSC.2004.837974
Web of Science® Google Scholar
63F. Pellizzer, A. Benvenuti, B. Gleixner, Y. Kim, B. Johnson, M. Magistretti, T. Marangon, A. Pirovano, R. Bez, G. Atwood, in 2006 Symp. VLSI Technology 2006, Digest of Technical Papers 2006, Honolulu, HI, USA, pp. 122–123.
Google Scholar
64A. Pirovano, F. Pellizzer, I. Tortorelli, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, R. Bez, in ESSDERC 2007 - 37th European Solid State Device Research Conf., Munich, Germany 2007, pp. 222–225.
Google Scholar
65J. Oh, J. Park, Y. Lim, H. Lim, Y. Oh, J. Kim, J. Shin, J. Park, Y. Song, K. Ryoo, D. Lim, S. Park, J. Kim, J. Kim, J. Yu, F. Yeung, C. Jeong, J. Kong, D. Kang, G. Koh, G. Jeong, H. Jeong, K. Kim, in 2006 Int. Electron Devices Meeting, San Francisco, CA, USA 2006, pp. 1–4.
Google Scholar
66K.-J. Lee, B.-H. Cho, W.-Y. Cho, S. Kang, B.-G. Choi, H.-R. Oh, C.-S. Lee, H.-J. Kim, J.-M. Park, Q. Wang, M.-H. Park, Y.-H. Ro, J.-Y. Choi, K.-S. Kim, Y.-R. Kim, I.-C. Shin, K.-W. Lim, H.-K. Cho, C.-H. Choi, W.-R. Chung, D.-E. Kim, K.-S. Yu, G.-T. Jeong, H.-S. Jeong, C.-K. Kwak, C.-H. Kim, K. Kim, in 2007 IEEE Int. Solid-State Circuits Conf., Digest of Technical Papers, San Francisco, CA, USA 2007, pp. 472–616.
Google Scholar
67T. Happ, M. Breitwisch, A. Schrott, J. Philipp, M. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. Ho, S. Chen, C. Chen, E. Joseph, S. Zaidi, G. Burr, B. Yee, Y. Chen, S. Raoux, H. Lung, R. Bergmann, C. Lam, in 2006 Symp. VLSI Technology, 2006. Digest of Technical Papers , Honolulu, HI, USA, pp. 120–121.
Google Scholar
68M. Breitwisch, T. Nirschl, C. Chen, Y. Zhu, M. Lee, M. Lamorey, G. Burr, E. Joseph, A. Schrott, J. Philipp, R. Cheek, T. Happ, S. Chen, S. Zaidi, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnagel, M. Yang, Y. Chen, R. Bergmann, H. Lung, C. Lam, in 2007 IEEE Symp. VLSI Technology, Kyoto, Japan 2007, pp. 100–101.
Google Scholar
69T. Nirschl, J. Philipp, T. Happ, G. Burr, B. Rajendran, M.-H. Lee, A. Schrott, M. Yang, M. Breitwisch, C.-F. Chen, E. Joseph, M. Lamorey, R. Cheek, S.-H. Chen, S. Zaidi, S. Raoux, Y. Chen, Y. Zhu, R. Bergmann, H.-L. Lung, C. Lam, in 2007 IEEE Int. Electron Devices Meeting, Washington, DC, USA 2007, pp. 461–464.
Google Scholar
70G. Servalli, in 2009 IEEE Int. Electron Devices Meeting (IEDM) 2009, Baltimore, MD, USA, pp. 1–4.
Google Scholar
71C. Villa, D. Mills, G. Barkley, H. Giduturi, S. Schippers, D. Vimercati, in 2010 IEEE Int. Solid-State Circuits Conf. - (ISSCC), San Francisco, CA, USA 2010, pp. 270–271.
Google Scholar
72A. Redaelli, E. Petroni, R. Annunziata, Mater. Sci. Semicond. Process. 2022, 137, 106184.
10.1016/j.mssp.2021.106184
CAS Web of Science® Google Scholar
73R. Annunziata, P. Zuliani, M. Borghi, G. De Sandre, L. Scotti, C. Prelini, M. Tosi, I. Tortorelli, F. Pellizzer, in 2009 IEEE Int. Electron Devices Meeting (IEDM), Baltimore, MD, USA 2009, pp. 1–4.
Google Scholar
74D. Kau, S. Tang, I. V. Karpov, R. Dodge, B. Klehn, J. A. Kalb, J. Strand, A. Diaz, N. Leung, J. Wu, S. Lee, T. Langtry, K. Wei Chang, C. Papagianni, J. Lee, J. Hirst, S. Erra, E. Flores, N. Righos, H. Castro, G. Spadini, in 2009 IEEE Int. Electron Devices Meeting (IEDM) 2009, Baltimore, MD, USA, pp. 1–4.
Google Scholar
75https://www.techinsights.com/blog/intel-3d-xpoint-memory-die-removed-intel-optanetm-pcm-phase-change-memory (accessed: April 2025).
Google Scholar
76A. Fazio, in 2020 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2020, pp. 24.1.1–24.1.4.
Google Scholar
77F. Pellizzer, A. Pirovano, R. Bez, R. L. Meyer, in 2023 Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2023, pp. 1–4.
Google Scholar
78J. Yi, M. Kim, J. Seo, N. Park, S. Lee, J. Kim, G. Do, H. Jang, H. Koo, S. Cho, S. Chae, T. Kim, M.-H. Na, S. Cha, in 2023 IEEE Symp. VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan 2023, pp. 1–2.
Google Scholar
79N. Papandreou, H. Pozidis, A. Pantazi, A. Sebastian, M. Breitwisch, C. Lam, E. Eleftheriou, in 2011 IEEE Int. Symp. Circuits and Systems (ISCAS), Rio de Janeiro, Brazil 2011, pp. 329–332.
Google Scholar
80A. Athmanathan, M. Stanisavljevic, N. Papandreou, H. Pozidis, E. Eleftheriou, IEEE J. Emerging Sel. Top. Circuits Syst. 2016, 6, 87.
10.1109/JETCAS.2016.2528598
Web of Science® Google Scholar
81S. Raoux, R. M. Shelby, J. Jordan-Sweet, B. Munoz, M. Salinga, Y.-C. Chen, Y.-H. Shih, E.-K. Lai, M.-H. Lee, Microelectron. Eng. 2008, 85, 2330.
10.1016/j.mee.2008.08.004
CAS Web of Science® Google Scholar
82C.-F. Chen, A. Schrott, M. H. Lee, S. Raoux, Y. H. Shih, M. Breitwisch, F. H. Baumann, E. K. Lai, T. M. Shaw, P. Flaitz, R. Cheek, E. A. Joseph, S. H. Chen, B. Rajendran, H. L. Lung, C. Lam, in 2009 IEEE Int. Memory Workshop, Monterey, CA, USA 2009, pp. 1–2.
Google Scholar
83R. Bez, in 2009 IEEE Int. Electron Devices Meeting (IEDM) 2009, Baltimore, MD, USA, pp. 1–4.
Google Scholar
84M. Boniardi, A. Redaelli, I. Tortorelli, S. Lavizzari, A. Pirovano, F. Pellizzer, E. Varesi, D. Erbetta, C. Bresolin, A. Modelli, R. Bez, in 2012 4th IEEE Int. Memory Workshop, IEEE, Milan, Italy 2012, pp. 1–3, ISBN 978-1-4673-1081-9 978-1-4673-1079-6, http://ieeexplore.ieee.org/document/6213679/.
Google Scholar
85H. Y. Cheng, J. Y. Wu, R. Cheek, S. Raoux, M. BrightSky, D. Garbin, S. Kim, T. H. Hsu, Y. Zhu, E. K. Lai, E. Joseph, A. Schrott, S. C. Lai, A. Ray, H. L. Lung, C. Lam, in 2012 Int. Electron Devices Meeting, San Francisco, CA, USA 2012, pp. 31.1.1–31.1.4.
Google Scholar
86H. Y. Cheng, M. BrightSky, S. Raoux, C. F. Chen, P. Y. Du, J. Y. Wu, Y. Y. Lin, T. H. Hsu, Y. Zhu, S. Kim, C. M. Lin, A. Ray, H. L. Lung, C. Lam, in 2013 IEEE Int. Electron Devices Meeting, Washington, DC, USA 2013, pp. 30.6.1–30.6.4.
Google Scholar
87G. Betti Beneventi, L. Perniola, V. Sousa, E. Gourvest, S. Maitrejean, J. Bastien, A. Bastard, B. Hyot, A. Fargeix, C. Jahan, J. Nodin, A. Persico, A. Fantini, D. Blachier, A. Toffoli, S. Loubriat, A. Roule, S. Lhostis, H. Feldis, G. Reimbold, T. Billon, B. De Salvo, L. Larcher, P. Pavan, D. Bensahel, P. Mazoyer, R. Annunziata, P. Zuliani, F. Boulanger, Solid-State Electron. 2011, 65–66, 197, .
10.1016/j.sse.2011.06.029
CAS Web of Science® Google Scholar
88X. Zhou, M. Xia, F. Rao, L. Wu, X. Li, Z. Song, S. Feng, H. Sun, ACS Appl. Mater. Interfaces 2014, 6, 14207.
10.1021/am503502q
CAS PubMed Web of Science® Google Scholar
89H. Y. Cheng, W. C. Chien, M. BrightSky, Y. H. Ho, Y. Zhu, A. Ray, R. Bruce, W. Kim, C. W. Yeh, H. L. Lung, C. Lam, in 2015 IEEE Int. Electron Devices Meeting (IEDM), Washington, DC, USA 2015, pp. 3.5.1–3.5.4.
Google Scholar
90X. Chen, Y. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G. Liu, T. Guo, L. Wu, X. Liu, Y. Cheng, Z. Song, Sci. Rep. 2018, 8, 6839.
10.1038/s41598-018-25215-z
PubMed Web of Science® Google Scholar
91Y. Zhou, L. Sun, G. M. Zewdie, R. Mazzarello, V. L. Deringer, E. Ma, W. Zhang, J. Mater. Chem. C 2020, 8, 3646.
10.1039/D0TC00096E
CAS Web of Science® Google Scholar
92R. E. Simpson, P. Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, J. Tominaga, Nat. Nanotechnol. 2011, 6, 501.
10.1038/nnano.2011.96
CAS PubMed Web of Science® Google Scholar
93R. Wang, V. Bragaglia, J. E. Boschker, R. Calarco, Cryst. Growth Des. 2016, 16, 3596.
10.1021/acs.cgd.5b01714
CAS PubMed Web of Science® Google Scholar
94S. Cecchi, E. Zallo, J. Momand, R. Wang, B. J. Kooi, M. A. Verheijen, R. Calarco, APL Mater. 2017, 5, 026107.
10.1063/1.4976828
Web of Science® Google Scholar
95M. Boniardi, J. E. Boschker, J. Momand, B. J. Kooi, A. Redaelli, R. Calarco, Phys. Status Solidi RRL 2019, 13, 1800634.
10.1002/pssr.201800634
Web of Science® Google Scholar
96A. I. Khan, X. Wu, C. Perez, B. Won, K. Kim, P. Ramesh, H. Kwon, M. C. Tung, Z. Lee, I.-K. Oh, K. Saraswat, M. Asheghi, K. E. Goodson, H.-S. P. Wong, E. Pop, Nano Lett. 2022, 22, 6285.
10.1021/acs.nanolett.2c01869
CAS PubMed Web of Science® Google Scholar
97M. Salinga, B. Kersting, I. Ronneberger, V. P. Jonnalagadda, X. T. Vu, M. Le Gallo, I. Giannopoulos, O. Cojocaru-Mirédin, R. Mazzarello, A. Sebastian, Nat. Mater. 2018, 17, 681.
10.1038/s41563-018-0110-9
CAS PubMed Web of Science® Google Scholar
98G. W. Burr, M. J. Brightsky, A. Sebastian, H.-Y. Cheng, J.-Y. Wu, S. Kim, N. E. Sosa, N. Papandreou, H.-L. Lung, H. Pozidis, E. Eleftheriou, C. H. Lam, IEEE J. Emerging Sel. Top. Circuits Syst. 2016, 6, 146.
10.1109/JETCAS.2016.2547718
Web of Science® Google Scholar
99P. Zuliani, E. Varesi, E. Palumbo, M. Borghi, I. Tortorelli, D. Erbetta, G. D. Libera, N. Pessina, A. Gandolfo, C. Prelini, L. Ravazzi, R. Annunziata, IEEE Trans. Electron Devices 2013, 60, 4020.
10.1109/TED.2013.2285403
CAS Web of Science® Google Scholar
100P. Cappelletti, R. Annunziata, F. Arnaud, F. Disegni, A. Maurelli, P. Zuliani, J. Phys. D: Appl. Phys. 2020, 53, 193002.
10.1088/1361-6463/ab71aa
CAS Web of Science® Google Scholar
101N. Ciocchini, E. Palumbo, M. Borghi, P. Zuliani, R. Annunziata, D. Ielmini, in 2013 IEEE Int. Electron Devices Meeting 2013, Washington, DC, USA, pp. 22.1.1–22.1.4.
Google Scholar
102A. Redaelli, A. Gandolfo, G. Samanni, E. Gomiero, E. Petroni, L. Scotti, A. Lippiello, P. Mattavelli, J. Jasse, D. Codegoni, A. Serafini, R. Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J. Grenier, O. Weber, D. Turgis, A. Valery, S. Del Medico, V. Caubet, J. Reynard, D. Dutartre, L. Favennec, A. Conte, F. Disegni, M. De Tomasi, A. Ventre, M. Baldo, D. Ielmini, et al., in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conf. (ESSDERC), Grenoble, France 2021, pp. 231–234.
Google Scholar
103E. Petroni, A. Serafini, D. Codegoni, P. Targa, L. Mariani, M. Scuderi, G. Nicotra, A. Redaelli, Front. Phys. 2022, 10, 862954.
10.3389/fphy.2022.862954
Web of Science® Google Scholar
104E. Palumbo, P. Zuliani, M. Borghi, R. Annunziata, Solid-State Electron. 2017, 133, 38.
10.1016/j.sse.2017.03.016
CAS Web of Science® Google Scholar
105M. Boniardi, D. Ielmini, Appl. Phys. Lett. 2011, 98, 243506.
10.1063/1.3599559
CAS Web of Science® Google Scholar
106S. Gabardi, S. Caravati, G. C. Sosso, J. Behler, M. Bernasconi, Phys. Rev. B 2015, 92, 054201.
10.1103/PhysRevB.92.054201
CAS Web of Science® Google Scholar
107L. Laurin, M. Baldo, E. Petroni, G. Samanni, L. Turconi, A. Motta, M. Borghi, A. Serafini, D. Codegoni, M. Scuderi, S. Ran, A. Claverie, D. Ielmini, R. Annunziata, A. Redaelli, in 2023 IEEE Int. Reliability Physics Symp. (IRPS), Monterey, CA, USA 2023, pp. 1–7.
Google Scholar
108I. Boybat, T. Boesch, M. Allegra, M. Baldo, J. Bertolini-Agnoletto, G. W. Burr, A. Buschini, A. Cabrini, E. Calvetti, C. Cappetta, F. Conti, E. Ferro, E. F. Scarselli, A. Garofalo, F. Girardi, G. Islamoglu, V. P. Jonnalagadda, G. Karunaratne, C. Lammie, M. Le Gallo, C. Li, R. Massa, A. C. Ornstein, H. Pang, M. Pasotti, B. Rajendran, A. Redaelli, I. Sanli, W. A. Simon, A. Singh, S.-P. Singh, G. Urlini, A. Vasilopoulos, R. Zurla, G. Desoli, A. Sebastian, in 2024 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2024, pp. 1–4.
Google Scholar
109Y. LeCun, Y. Bengio, G. Hinton, Nature 2015, 521, 436.
10.1038/nature14539
CAS PubMed Web of Science® Google Scholar
110A. Redaelli, F. Pellizzer, A. Pirovano, Ger., European Patent 2034536 B1, 2012.
Google Scholar
111W. W. Koelmans, A. Sebastian, V. P. Jonnalagadda, D. Krebs, L. Dellmann, E. Eleftheriou, Nat. Commun. 2015, 6, 8181.
10.1038/ncomms9181
PubMed Web of Science® Google Scholar
112S. Ghazi Sarwat, T. M. Philip, C.-T. Chen, B. Kersting, R. L. Bruce, C.-W. Cheng, N. Li, N. Saulnier, M. BrightSky, A. Sebastian, Adv. Funct. Mater. 2021, 31, 2106547.
10.1002/adfm.202106547
CAS Web of Science® Google Scholar
113K. Ding, J. Wang, Y. Zhou, H. Tian, L. Lu, R. Mazzarello, C. Jia, W. Zhang, F. Rao, E. Ma, Science 2019, 366, 210.
10.1126/science.aay0291
CAS PubMed Web of Science® Google Scholar
114R. Piombo, S. Ritarossi, R. Mazzarello, Adv. Sci. 2024, 11, 2402375.
10.1002/advs.202402375
CAS Web of Science® Google Scholar
115X. Wu, A. I. Khan, H. Lee, C.-F. Hsu, H. Zhang, H. Yu, N. Roy, A. V. Davydov, I. Takeuchi, X. Bao, H.-S. P. Wong, E. Pop, Nat. Commun. 2024, 15, 13.
10.1038/s41467-023-42792-4
CAS PubMed Web of Science® Google Scholar
116S.-O. Park, S. Hong, S.-J. Sung, D. Kim, S. Seo, H. Jeong, T. Park, W. J. Cho, J. Kim, S. Choi, Nature 2024, 628, 293.
10.1038/s41586-024-07230-5
CAS PubMed Web of Science® Google Scholar
117M. Boniardi, A. Redaelli, C. Cupeta, F. Pellizzer, L. Crespi, G. D’Arrigo, A. L. Lacaita, G. Servalli, in 2014 IEEE Int. Electron Devices Meeting, San Francisco, CA, USA 2014, pp. 29.1.1–29.1.4.
Google Scholar
118B. J. Shastri, A. N. Tait, T. Ferreira de Lima, W. H. P. Pernice, H. Bhaskaran, C. D. Wright, P. R. Prucnal, Nat. Photonics 2021, 15, 102.
10.1038/s41566-020-00754-y
CAS Web of Science® Google Scholar
119Y. Shen, N. C. Harris, S. Skirlo, M. Prabhu, T. Baehr-Jones, M. Hochberg, X. Sun, S. Zhao, H. Larochelle, D. Englund, M. Soljačić, Nat. Photonics 2017, 11, 441.
10.1038/nphoton.2017.93
CAS Web of Science® Google Scholar
120J. Feldmann, N. Youngblood, M. Karpov, H. Gehring, X. Li, M. Stappers, M. Le Gallo, X. Fu, A. Lukashchuk, A. S. Raja, J. Liu, C. D. Wright, A. Sebastian, T. J. Kippenberg, W. H. P. Pernice, H. Bhaskaran, Nature 2021, 589, 52.
10.1038/s41586-020-03070-1
CAS PubMed Web of Science® Google Scholar
121C. Rios, N. Youngblood, Z. Cheng, M. L. Gallo, W. H. P. Pernice, C. D. Wright, A. Sebastian, H. Bhaskaran, Sci. Adv. 2019, 5, eaau5759.
10.1126/sciadv.aau5759
CAS PubMed Web of Science® Google Scholar
122I. Tortorelli, S. Tang, C. Papagianni, US Patent 10134470, 2018.
Google Scholar
123M. Kim, Y. Bae, J. Park, J. Yeon, H. Shim, S. Jin, H. Kim, S. Oh, G. Do, D. Yun, H. D. Lee, D. Ahn, J. Lee, M. Park, J. Yoon, J. Yi, T. Kim, G. Park, S. Chung, J. Cheon, S. Chae, N. Park, K. Kim, D. Oh, J. Yi, S. Cha, in 2024 IEEE Symp. VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA 2024, pp. 1–2.
Google Scholar
124J. Lee, Y. Seo, S. Ban, D. G. Kim, Y. B. Park, T. H. Lee, H. Hwang, IEEE Trans. Electron Devices 2024, 71, 3351.
10.1109/TED.2024.3378221
CAS Web of Science® Google Scholar
125W. Chien, J. Zheng, C. Yeh, L. Gignac, H. Cheng, Z. Liu, A. Grun, C. Sung, E. Lai, S. Cheng, C. Cheng, L. Buzi, A. Ray, D. Bishop, R. Bruce, M. BrightSky, H. Lung, in 2024 IEEE Symp. VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA 2024, pp. 1–2.
Google Scholar
126T. Ravsher, R. Degraeve, D. Garbin, S. Clima, A. Fantini, G. Donadio, S. Kundu, W. Devulder, H. Hody, G. Potoms, J. Van Houdt, V. Afanas'ev, A. Belmonte, G. Kar, in 2024 IEEE Int. Reliability Physics Symp. (IRPS), Grapevine, TX, USA 2024, pp. 7A.5–1–7A.5–9.
Google Scholar
127P. Fantini, A. Ghetti, E. Varesi, A. Pirovano, D. Baratella, C. Ribaldone, D. Campi, M. Bernasconi, R. Bez, in 2024 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA 2024, pp. 1–4.
Google Scholar
128M. Kinoshita, Y. Sasago, H. Minemura, Y. Anzai, M. Tai, Y. Fujisaki, S. Kusaba, T. Morimoto, T. Takahama, T. Mine, A. Shima, Y. Yonamoto, T. Kobayashi, in 2012 Symp. VLSI Technology (VLSIT), Honolulu, HI, USA 2012, pp. 35–36.
Google Scholar
129N. Hur, Y. Kim, B. Park, S. Yoon, S. Kim, D.-H. Lim, H. Jeong, Y. Kwon, J. Suh, Small Methods 2024, 9, 2401381.
10.1002/smtd.202401381
Web of Science® Google Scholar
130A. I. Khan, A. Daus, R. Islam, K. M. Neilson, H. R. Lee, H. P. Wong, E. Pop, Science 2021, 373, 1243.
10.1126/science.abj1261
CAS PubMed Web of Science® Google Scholar
131A. I. Khan, A. Daus, E. Pop, in 2020 Device Research Conf. (DRC) 2020, Columbus, OH, USA, p. 1.
Google Scholar
132S. Calvi, M. Bertelli, S. De Simone, F. Maita, S. Prili, A. Diaz Fattorini, F. De Matteis, V. Mussi, F. Righi Riva, M. Longo, F. Arciprete, R. Calarco, Adv. Electron. Mater. 2024, 11, 2400184.
10.1002/aelm.202400184
Web of Science® Google Scholar
133F. M. Schenk, T. Zellweger, D. Kumaar, D. Bošković, S. Wintersteller, P. Solokha, S. De Negri, A. Emboras, V. Wood, M. Yarema, ACS Nano 2024, 18, 1063.
10.1021/acsnano.3c10312
CAS PubMed Google Scholar
134H. He, D. Kumaar, K. Portner, T. Zellweger, F. M. Schenk, S. Wintersteller, V. Vlnieska, A. Emboras, V. Wood, M. Yarema, Adv. Electron. Mater. 2024, 10, 2400203.
10.1002/aelm.202400203
CAS Web of Science® Google Scholar