Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications
Abstract
Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. –First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [10]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h−1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.
Conflict of Interest
The authors declare no conflict of interest.
