Volume 217, Issue 3 1900516

Original Paper

Improved Electron Transport Properties of Ga_1–xIn_xSb Quantum Well Channel Using Strained-Al_0.40In_0.60Sb/Al_1–yIn_ySb Stepped Buffer

Mizuho Hiraoka,

Corresponding Author

Mizuho Hiraoka

[email protected]

orcid.org/0000-0002-8176-893X

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Yuki Endoh,

Yuki Endoh

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Koki Osawa,

Koki Osawa

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Naoyuki Kishimoto,

Naoyuki Kishimoto

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Takuya Hayashi,

Takuya Hayashi

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Ryuto Machida,

Ryuto Machida

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Issei Watanabe,

Issei Watanabe

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Yoshimi Yamashita,

Yoshimi Yamashita

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Shinsuke Hara,

Shinsuke Hara

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Takahiro Gotow,

Takahiro Gotow

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Akifumi Kasamatsu,

Akifumi Kasamatsu

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Akira Endoh,

Akira Endoh

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Hiroki I. Fujishiro,

Corresponding Author

Hiroki I. Fujishiro

[email protected]

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Mizuho Hiraoka,

Corresponding Author

Mizuho Hiraoka

[email protected]

orcid.org/0000-0002-8176-893X

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Yuki Endoh,

Yuki Endoh

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Koki Osawa,

Koki Osawa

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Naoyuki Kishimoto,

Naoyuki Kishimoto

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Takuya Hayashi,

Takuya Hayashi

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Ryuto Machida,

Ryuto Machida

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Issei Watanabe,

Issei Watanabe

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Yoshimi Yamashita,

Yoshimi Yamashita

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Shinsuke Hara,

Shinsuke Hara

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Takahiro Gotow,

Takahiro Gotow

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Akifumi Kasamatsu,

Akifumi Kasamatsu

National Institute of Info. & Com. Tech. (NICT), 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo, 184-8795 Japan

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Akira Endoh,

Akira Endoh

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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Hiroki I. Fujishiro,

Corresponding Author

Hiroki I. Fujishiro

[email protected]

Department of Applied Electronics, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo, 125-8585 Japan

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First published: 24 October 2019

https://doi.org/10.1002/pssa.201900516

Citations: 1

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Abstract

Unstrained Ga_1–xIn_xSb quantum well (QW) channel using strained-Al_0.40In_0.60Sb/Al_1–yIn_ySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga_1–xIn_xSb QW is lattice-matched to the Al_1–yIn_ySb lower buffer layer. Sheet electron density (N_s) of Ga_1–xIn_xSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In content x of Ga_1–xIn_xSb. Unstrained Ga_0.22In_0.78Sb QW channel using strained-Al_0.40In_0.60Sb/Al_0.25In_0.75Sb stepped buffer has N_s of 2.05 × 10¹² cm⁻² and μ of 15 500 cm² V⁻¹ s⁻¹. Compared with the InSb QW channel, N_s increases by a factor of 193% and μ decreases to 87%. Consequently, the sheet resistance decreases to 59%. These results indicate that the unstrained Ga_1–xIn_xSb QW channel using strained-Al_0.40In_0.60Sb/Al_1–yIn_ySb stepped buffer is effective to improve the electron transport properties.

Conflict of Interest

The authors declare no conflict of interest.

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Citing Literature

Volume217, Issue3

Special Issue:Compound Semiconductors

February 2020

1900516

Improved Electron Transport Properties of Ga_1–xIn_xSb Quantum Well Channel Using Strained-Al_0.40In_0.60Sb/Al_1–yIn_ySb Stepped Buffer

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Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained-Al0.40In0.60Sb/Al1–yInySb Stepped Buffer

Abstract

Conflict of Interest

References

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Improved Electron Transport Properties of Ga_1–xIn_xSb Quantum Well Channel Using Strained-Al_0.40In_0.60Sb/Al_1–yIn_ySb Stepped Buffer