Original Paper
Highdetectivity AlInSb Midinfrared Photodiode Sensors with Dislocation Filter Layers for Gas Sensing
Abstract
A midinfrared photodiode is developed for methane gas sensing based on the highly mismatched AlInSb/GaAs system. Inserting optimized dislocation filter layers (DFLs) in the buffer layer reduced the threading dislocation density in the active layer to less than one-third of that in the photodiode without DFLs. This improvement produces a high normal incidence detectivity of 1.8 × 109 cm √Hz W−1 at 3.3 μm, which is more than twice the highest detectivity previously obtained for a photodiode without DFLs.
Conflict of Interest
The authors declare no conflict of interest.
