Volume 206, Issue 8 pp. 1748-1751
Original Paper

Three-dimensional ordering in self-organized (In,Ga)As quantum dot multilayer structures

V. Kladko

Corresponding Author

V. Kladko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine

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M. Slobodian

M. Slobodian

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine

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P. Lytvyn

P. Lytvyn

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine

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V. Strelchuk

V. Strelchuk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine

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Yu. Mazur

Yu. Mazur

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

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E. Marega

E. Marega

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

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M. Hussein

M. Hussein

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

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G. Salamo

G. Salamo

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

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First published: 27 July 2009
Citations: 5

Abstract

Molecular beam epitaxy (MBE) grown In0.5Ga0.5As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high-resolution X-ray diffractometry (HRXRD) and AFM. It was determined that self-organized epitaxial growth of In0.5Ga0.5As/GaAs can lead to the formation of three-dimensional quantum-dot crystals with triclinic (distorted cubic) unit cell. The mechanisms of QDs ordering in dependence on As flux are analyzed.

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