Original Paper
Heteroepitaxial growth of lattice matched films on GaAs(001)
Abstract
The thin films of lattice matched materials Fe3Si and Ge are grown on GaAs(001) by molecular beam epitaxy and studied by grazing incidence X-ray diffraction. In the initial phase of Fe3Si growth, the surface is rough due to a formation of small islands. Two-dimensional layer-by-layer growth arises later on. Germanium grows on GaAs in a layer-by-layer growth mode right from the beginning. A substantial improvement of the surface smoothness of the Ge film during the growth is found.
