Volume 29, Issue 1 pp. 124-133
RESEARCH ARTICLE

Spatially resolved electrical modelling of cracks and other inhomogeneities in crystalline silicon solar cells

Miha Kikelj

Corresponding Author

Miha Kikelj

Faculty of Electrical Engineering, University of Ljubljana, Ljubljana, Slovenia

Correspondence

Miha Kikelj, Faculty of Electrical Engineering, University of Ljubljana, Tržaška cesta 25, SI-1000, Ljubljana, Slovenia.

Email: [email protected]

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Benjamin Lipovšek

Benjamin Lipovšek

Faculty of Electrical Engineering, University of Ljubljana, Ljubljana, Slovenia

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Matevž Bokalič

Matevž Bokalič

Faculty of Electrical Engineering, University of Ljubljana, Ljubljana, Slovenia

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Marko Topič

Marko Topič

Faculty of Electrical Engineering, University of Ljubljana, Ljubljana, Slovenia

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First published: 29 September 2020
Citations: 13

Abstract

We developed a fully scalable quasi-SPICE approach for electrical modelling of stress-induced inhomogeneities in crystalline silicon solar cells, based on damage detected by electroluminescence imaging. We present a model of active and inactive microcracks, highlight their effects on the current-voltage characteristic, and validate the model on a number of experimental cases. The generalisation of our model to a complexly damaged solar cell shows excellent agreement with the measurements, with only 0.12% estimation error of the power loss of the complexly damaged cell. The ability to accurately model fundamental stress induced inhomogeneities, and their effects on cell level is crucial to estimating long-term performance degradation and energy yield of installed photovoltaic modules throughout their lifetime. The developed scalable model paves a path to intricate, statistically supported modelling for power loss prediction and mitigation in solar cells, photovoltaic modules, and photovoltaic arrays caused by mechanically induced inhomogeneities.

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