Microwave and Optical Technology Letters

Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

Corresponding Author

H. Taher

[email protected]

Electrical Engineering department, Faculty of engineering and Islamic Architecture, Umm Alqura University, Makkah, Kingdom of Saudi Arabian

Electronics Research Institute, National Research Center Buildings, El-Tahrir Street, Dokki, Giza, Egypt

Electrical Engineering department, Faculty of engineering and Islamic Architecture, Umm Alqura University, Makkah, Kingdom of Saudi ArabianSearch for more papers by this author

H. Taher,

Corresponding Author

H. Taher

[email protected]

Electrical Engineering department, Faculty of engineering and Islamic Architecture, Umm Alqura University, Makkah, Kingdom of Saudi Arabian

Electronics Research Institute, National Research Center Buildings, El-Tahrir Street, Dokki, Giza, Egypt

Electrical Engineering department, Faculty of engineering and Islamic Architecture, Umm Alqura University, Makkah, Kingdom of Saudi ArabianSearch for more papers by this author

First published: 20 January 2012

https://doi.org/10.1002/mop.26635

Citations: 2

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Abstract

A developed direct extraction technique of small-signal π-topology Small signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented.The intrinsic model parameters are analytically extracted. The extraction procedure is performed using new set of exact equations that do not need numerical fitting, special polarization of the device or any kind of post processing. Flat frequency response of the extracted parameters is obtained. Excellent agreement is noticed between S-parameters measurements and its simulated counterpart using the extracted model in the frequency range from 40 MHz to 20 GHz at different bias conditions. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:584–589, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26635

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Volume54, Issue3

March 2012

Pages 584-589

Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

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Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

Abstract

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