Volume 29, Issue 2 pp. 333-342
Research Article

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high-speed photodetector

Nacer Debbar

Corresponding Author

Nacer Debbar

Electrical Engineering Department, College of Engineering, King Saud University, PO Box 800, Riyadh, 11421 Saudi Arabia

Correspondence to: Nacer Debbar, Electrical Engineering Department, College of Engineering, King Saud University, PO Box 800, Riyadh 11421, Saudi Arabia.

E-mail: [email protected]

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First published: 15 June 2015
Citations: 6

Abstract

We present a numerical characterization of a high-speed high-responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metal–semiconductor–metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high-speed optoelectronic applications. Copyright © 2015 John Wiley & Sons, Ltd.

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