Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent Organic Frameworks
Chenyu Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorDong Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorDr. Weifeng Zhang
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorHao Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
Search for more papers by this authorCorresponding Author
Prof. Gui Yu
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorChenyu Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorDong Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorDr. Weifeng Zhang
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
These authors contributed equally to this work.
Search for more papers by this authorHao Li
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
Search for more papers by this authorCorresponding Author
Prof. Gui Yu
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorGraphical Abstract
Two D-A-type covalent organic frameworks have been designed and prepared following a novel strategy for the construction of endurable and reliable memory devices. The state-of-the-art memristor-based COF-TT-BT thin film showed typical rewritable resistive switching behavior, a high ON/OFF current ratio (ca. 105), good endurance of 319 cycles, and a long retention time of 3.3×104 s.
Abstract
Developing new materials for the fabrication of resistive random-access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine-linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high-performance memristors. Two D-A-type two-dimensional COFs, COF-BT-TT and COF-TT-TVT, were designed and synthesized using a conventional solvothermal approach, and high-quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF-TT-BT and COF-TT-TVT films showed a high ON/OFF current ratio (ca. 105 and 104) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF-TT-BT-based rewritable devices were as high as 319 cycles and 3.3×104 s at a constant voltage of 0.1 V (160 cycles and 1.2×104 s for the COF-TT-TVT memristor).
Conflict of interest
The authors declare no conflict of interest.
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