Volume 20, Issue 31 2311755
Research Article

Dual Defect Passivation at the Buried Interface for Printable Mesoscopic Perovskite Solar Cells with Reduced Open-Circuit Voltage Loss

Dang Xu

Dang Xu

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

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Dongjie Wang

Corresponding Author

Dongjie Wang

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

E-mail: [email protected]; [email protected]; [email protected]

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Jiale Liu

Jiale Liu

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074 P. R. China

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Jianhang Qi

Jianhang Qi

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074 P. R. China

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Kai Chen

Kai Chen

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074 P. R. China

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Wending Zhu

Wending Zhu

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

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Ying Tao

Ying Tao

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

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Zheling Zhang

Zheling Zhang

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

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Anyi Mei

Corresponding Author

Anyi Mei

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074 P. R. China

E-mail: [email protected]; [email protected]; [email protected]

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Jian Zhang

Corresponding Author

Jian Zhang

Engineering Research Center of Electronic Information Materials and Devices of Ministry of Education, Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi, 541004 P. R. China

E-mail: [email protected]; [email protected]; [email protected]

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First published: 26 April 2024
Citations: 5

Abstract

Numerous defects exist at the buried interface between the perovskite and adjacent electron transport layers in perovskite solar cells, resulting in severe non-radiative recombination and excessive open-circuit voltage (VOC) loss. Herein, a dual defect passivation strategy utilizing guanidine sulfate (GUA2SO4) as an interface modifier is first reported. On the one hand, the SO42− preferentially interacts with Pb-related defects, generating water-insoluble lead oxysalts complexes. Additionally, GUA+ diffuses into the perovskite and induces the formation of low-dimensional perovskite. These reactions effectively suppress trap states at the buried interface and perovskite boundaries in printable mesoscopic perovskite solar cells (p-MPSCs), thus increasing the carrier lifetime. Meanwhile, GUA2SO4 optimizes the interface energy band alignment, thus accelerating the charge extraction and transfer at the buried interface. This synergistic effect of trap passivation and interface energy band alignment modulation is strongly demonstrated by an increase in average VOC of 70 mV and the power conversion efficiency improvement from 17.51% to 18.70%. This work provides a novel approach to efficiently improve the performance of p-MPSCs through dual-targeted defect passivation at the buried interface.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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