Volume 18, Issue 20 2200952
Research Article

High Performance, Stable, and Flexible Piezoelectric Nanogenerator Based on GaN:Mg Nanowires Directly Grown on Tungsten Foil

Aadil Waseem

Aadil Waseem

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

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Indrajit V. Bagal

Indrajit V. Bagal

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

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Ameer Abdullah

Ameer Abdullah

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

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Mandar A. Kulkarni

Mandar A. Kulkarni

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

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Hamza Thaalbi

Hamza Thaalbi

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

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Jun-Seok Ha

Jun-Seok Ha

Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186 Republic of Korea

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June Key Lee

June Key Lee

Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186 Republic of Korea

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Sang-Wan Ryu

Corresponding Author

Sang-Wan Ryu

Department of Physics, Chonnam National University, Gwangju, 61186 Republic of Korea

Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186 Republic of Korea

E-mail: [email protected]

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First published: 23 April 2022
Citations: 3

Abstract

Rapid development of micro-electromechanical systems increases the need for flexible and durable piezoelectric nanogenerators (f-PNG) with high output power density. In this study, a high-performance, flexible, and highly stable f-PNG is prepared by directly growing the Mg-doped semi-insulating GaN nanowires (NWs) on a 30-µm-thick tungsten foil using vapor–liquid–solid growth mechanism. The direct growth of NWs on metal foil extends the overall lifetime of the f-PNG. The semi-insulating GaN NWs significantly enhance the piezoelectric performance of the f-PNG by reducing free electron density. Additionally, the direct integration of NWs on the tungsten foil improves the conductivity, resulting in current enhancement (2.5 mA) with an output power density of 13 mW cm−2. The piezoelectric performance of the f-PNG is investigated under several bending angles, actuation frequencies, continuous vibrations, and airflow velocities. The maximum output voltage exhibited by the f-PNG is 20 V at a bending angle of 155°. The f-PNG is connected to the backside of an index finger to monitor finger bending behavior by changing the current density. Depending on its flexibility and sensitivity, the f-PNG can be used as a health-monitoring sensor to be mounted on joints (fingers, hands, elbows, and knees) to monitor their repeated bending and relaxation.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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