Volume 9, Issue 3-4 pp. 761-764
ICNS-9 – Contributed Article

Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching

Yen-Hsiang Fang

Corresponding Author

Yen-Hsiang Fang

Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

Phone: +886 3 5916917, Fax: +886 3 5915138Search for more papers by this author
Yi-Keng Fu

Yi-Keng Fu

Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

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Rong Xuan

Rong Xuan

Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan 300

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Ren-Hao Jiang

Ren-Hao Jiang

Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

The Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

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Chia-Feng Lin

Chia-Feng Lin

Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

The Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

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First published: 13 January 2012

Abstract

The 405 nm near-ultra violet (NUV) InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on GaN substrate with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. The back-side etching NUV LEDs had larger output power than that of conventional NUV-LEDs, NUV-LEDs with wider wells, and NUV-LEDs grown on pattern sapphire substrate.

When the NUV LED were operated as a forward current of 20 mA, the increasing output power of back-side etching NUV LEDs was about 70%, 106%, and 8% than that of conventional NUV-LEDs, NUV-LEDs with wider wells, and NUV-LEDs grown on pattern sapphire substrate (PSS), respectively. This larger enhancement result from the improved light extraction attributed to the different transmittance as hexagonal pyramid on N-face GaN was etched (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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