Volume 3, Issue 4 pp. 887-890

Original Paper

Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBE

E. Roventa,

Corresponding Author

E. Roventa

[email protected]

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

Phone: +49 421 218 2232 Fax: +49 421 218 7381Search for more papers by this author

G. Alexe,

G. Alexe

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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M. Schowalter,

M. Schowalter

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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R. Kröger,

R. Kröger

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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D. Hommel,

D. Hommel

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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A. Rosenauer,

A. Rosenauer

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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E. Roventa,

Corresponding Author

E. Roventa

[email protected]

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

Phone: +49 421 218 2232 Fax: +49 421 218 7381Search for more papers by this author

G. Alexe,

G. Alexe

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

Search for more papers by this author

M. Schowalter,

M. Schowalter

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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R. Kröger,

R. Kröger

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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D. Hommel,

D. Hommel

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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A. Rosenauer,

A. Rosenauer

Institute of Solid State Physics, University of Bremen, Otto Hahn Allee, 28359 Bremen, Germany

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First published: 07 March 2006

https://doi.org/10.1002/pssc.200564694

Citations: 2

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Abstract

Spatial correlation of five- and ten-fold stacks of CdSe quantum dots separated by Zn(S)Se spacers with different thicknesses has been investigated in plan-view and cross-section geometry using transmission electron microscopy and compared with grazing incidence x-ray results. For different spacer layer thicknesses investigations revealed a strain induced ordering process which breaks down for spacer layers thicker than 8 nm. An anisotropy of the lateral alignment of the quantum dots was also found, connected with the anisotropic strain distribution around the quantum dots and surface diffusion. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

References

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Volume3, Issue4

March 2006

Pages 887-890

Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBE

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References

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Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBE

Abstract

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