Volume 3, Issue 4 pp. 1180-1184
Original Paper

Photoluminescence characterization of cubic CdS epilayers

Young-Moon Yu

Young-Moon Yu

Department of Optical and Electronic Physics, Mokwon University, Daejeon 302-729, Korea

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Yong Dae Choi

Corresponding Author

Yong Dae Choi

Department of Optical and Electronic Physics, Mokwon University, Daejeon 302-729, Korea

Phone: +82 42 829 7552, Fax: +82 42 823 0639Search for more papers by this author
First published: 07 March 2006
Citations: 7

Abstract

Cubic CdS epilayers were grown on (100) GaAs substrates by hot-wall epitaxy and their photoluminescence (PL) characteristics were studied. A heavy hole free exciton peak was observed even at room temperature and a light hole free exciton peak was observed at 30–100 K. The temperature dependence of the free excitonic emission intensity was demonstrated using a two-step quenching mechanism. The excitation power dependence showed that the PL peak at 2.367 eV is due to the free-to-bound transition. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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