Volume 1, Issue 11 pp. 2773-2778
Electron-phonon interaction

Electron-phonon interactions in multi-component plasma created by light- and heavy hole gas in polar semiconductors: from bulk to quantum dot structures

B. H. Bairamov

Corresponding Author

B. H. Bairamov

Ioffe Physico-Technical Institute, Department of Solid State Physics, RAS, 26 Polytekhnicheskaya ul., 194021 St. Petersburg, Russia

Phone: +7 812 247 91 40, Fax: +7 812 247 10 17Search for more papers by this author
V. V. Toporov

V. V. Toporov

Ioffe Physico-Technical Institute, Department of Solid State Physics, RAS, 26 Polytekhnicheskaya ul., 194021 St. Petersburg, Russia

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V. A. Voitenko

V. A. Voitenko

Ioffe Physico-Technical Institute, Department of Solid State Physics, RAS, 26 Polytekhnicheskaya ul., 194021 St. Petersburg, Russia

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G. Irmer

G. Irmer

Institute of Theoretical Physics, University of Mining and Technology, 09596 Freiberg, Germany

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J. Monecke

J. Monecke

Institute of Theoretical Physics, University of Mining and Technology, 09596 Freiberg, Germany

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First published: 16 November 2004
Citations: 4

Abstract

We study hole-phonon interactions as well as charge and spin scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and by self-assembled InAs/GaAs quantum dot structures. Theoretical arguments and experimental evidence of acoustic plasmon existence are presented. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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