Utilization of high pressure for synthesizing superconducting semiconductors: analysis of Ekimov's method
Corresponding Author
Koun Shirai
Nanoscience and Nanotechnology Center, ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Phone: +81-66789-4302, Fax: +81-66789-8539Search for more papers by this authorHaruhiko Dekura
Nanoscience and Nanotechnology Center, ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Search for more papers by this authorAkira Yanase
ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Search for more papers by this authorCorresponding Author
Koun Shirai
Nanoscience and Nanotechnology Center, ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Phone: +81-66789-4302, Fax: +81-66789-8539Search for more papers by this authorHaruhiko Dekura
Nanoscience and Nanotechnology Center, ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Search for more papers by this authorAkira Yanase
ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Search for more papers by this authorAbstract
Use of a high-pressure process is proposed for synthesizing highly doped semiconductors. Working on a real example in a recent experiment by Ekimov on B-doped diamond synthesis, a theoretical investigation has been made of an efficient doping method. The underlying principle is simple: stiffer materials are energetically favorable over softer ones under high pressure. Softer impurities are easily dissolved in stiff crystals. In Ekimov's method, the energy required for a B atom to transfer from boron carbide to diamond comes from the energy gain by converting graphite to diamond, in addition to the entropy effect of dissolving the B atom in diamond. On the basis of this analysis, a potential of more than 10 at% of doping, which would improve Tc, by high-pressure processes is suggested. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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