Volume 246, Issue 3 pp. 655-657
Original Paper

Baric and temperature dependences of kinetic coefficients in p-Cd0.7Mn0.3GeAs2 at atmospheric and high pressures

A. Yu. Mollaev

Corresponding Author

A. Yu. Mollaev

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

Phone: +07 822 629 322, Fax: +07 822 629 322Search for more papers by this author
I. K. Kamilov

I. K. Kamilov

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

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R. K. Arslanov

R. K. Arslanov

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

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U. Z. Zalibekov

U. Z. Zalibekov

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

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T. R. Arslanov

T. R. Arslanov

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

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R. R. Bashirov

R. R. Bashirov

Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, M. Yaragskogo str. 94, 367003 Makhachkala, Russia

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V. M. Novotorzev

V. M. Novotorzev

Institute of Common and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

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S. F. Marenkin

S. F. Marenkin

Institute of Common and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

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First published: 17 February 2009
Citations: 7

Abstract

The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and Rρ(T) have been defined in the temperature range 77–450 K at atmospheric pressure. The pioneering measurements of magnetoresistance Δρxx (H, P)/ρ0(P) in Cd0.7Mn0.3GeAs2 are presented. A hysteresis of magnetoresistive effect has been found when pressure rises and falls. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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