Baric and temperature dependences of kinetic coefficients in p-Cd0.7Mn0.3GeAs2 at atmospheric and high pressures
Abstract
The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and Rρ(T) have been defined in the temperature range 77–450 K at atmospheric pressure. The pioneering measurements of magnetoresistance Δρxx (H, P)/ρ0(P) in Cd0.7Mn0.3GeAs2 are presented. A hysteresis of magnetoresistive effect has been found when pressure rises and falls. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)