Original Paper
Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111]
First published: 17 February 2009
Abstract
The nonlinear behavior of the electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111] was observed in the range of the strain-induced transition from metallic- to activation-type conductivity. The relative contribution of the quadratic term in the effective mass vs. pressure dependence increases with doping. For just metallic crystals of n-Si(P) the electron effective mass increase is described by only a single quadratic term. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
