Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates
Corresponding Author
T. Saka
Daido Institute of Technology, 10-3, Takiharu-cho, Minami-ku, Nagoya 457-8530, Japan
Phone: +81 52 612 6111, Fax: +81 52 612 5623Search for more papers by this authorT. Kato
Daido Steel Co. Ltd., 2-30, Daido-cho, Minami-ku, Nagoya 457-8545, Japan
Search for more papers by this authorX. G. Jin
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorM. Tanioku
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorT. Ujihara
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorY. Takeda
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorN. Yamamoto
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorY. Nakagawa
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorA. Mano
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorS. Okumi
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorM. Yamamoto
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorT. Nakanishi
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorH. Horinaka
Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531, Japan
Search for more papers by this authorT. Matsuyama
Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531, Japan
Search for more papers by this authorT. Yasue
Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530, Japan
Search for more papers by this authorT. Koshikawa
Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530, Japan
Search for more papers by this authorCorresponding Author
T. Saka
Daido Institute of Technology, 10-3, Takiharu-cho, Minami-ku, Nagoya 457-8530, Japan
Phone: +81 52 612 6111, Fax: +81 52 612 5623Search for more papers by this authorT. Kato
Daido Steel Co. Ltd., 2-30, Daido-cho, Minami-ku, Nagoya 457-8545, Japan
Search for more papers by this authorX. G. Jin
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorM. Tanioku
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorT. Ujihara
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorY. Takeda
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Search for more papers by this authorN. Yamamoto
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorY. Nakagawa
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorA. Mano
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorS. Okumi
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorM. Yamamoto
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorT. Nakanishi
Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Search for more papers by this authorH. Horinaka
Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531, Japan
Search for more papers by this authorT. Matsuyama
Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531, Japan
Search for more papers by this authorT. Yasue
Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530, Japan
Search for more papers by this authorT. Koshikawa
Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530, Japan
Search for more papers by this authorAbstract
The crystalline structure of GaAsP layers grown on GaAs and GaP (001) substrates, used for spin polarized photocathodes, has been investigated by X-ray diffraction. The layers on the GaAs substrate possess a mosaic structure observable by X-ray topography and consist of many large blocks. The mosaicity is anisotropic and the distribution of the mosaic is restricted within the (110) plane, and the blocks zigzag around the [110] direction. The layer grown on the GaP substrate was uniform and no mosaic was observed in the topographs. The results indicate that different mechanisms of strain release occur in GaAsP layers for tensile and compressive strains.
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