Volume 204, Issue 8 pp. 2528-2534
Original Paper

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

A. Boulle

Corresponding Author

A. Boulle

Science des Procédés Céramiques et de Traitements de Surface, CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas, 87065 Limoges Cedex, France

Phone: +44 5 55 45 22 44, Fax: +44 5 79 09 98Search for more papers by this author
D. Chaussende

D. Chaussende

Laboratoire des Matériaux et du Génie Physique, CNRS UMR 5628, INP Grenoble – Minatec, 3 parvis Louis Néel, BP257, 38016 Grenoble cedex 1, France

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F. Pecqueux

F. Pecqueux

Science des Procédés Céramiques et de Traitements de Surface, CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas, 87065 Limoges Cedex, France

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F. Conchon

F. Conchon

Science des Procédés Céramiques et de Traitements de Surface, CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas, 87065 Limoges Cedex, France

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L. Latu-Romain

L. Latu-Romain

Laboratoire des Matériaux et du Génie Physique, CNRS UMR 5628, INP Grenoble – Minatec, 3 parvis Louis Néel, BP257, 38016 Grenoble cedex 1, France

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O. Masson

O. Masson

Science des Procédés Céramiques et de Traitements de Surface, CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas, 87065 Limoges Cedex, France

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First published: 31 July 2007
Citations: 6

Abstract

Thick 3C-SiC single crystals grown by continuous-feed physical vapor transport (CF-PVT) are studied by high-resolution X-ray reciprocal space mapping. These crystals contain Shockley-type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along the 〈111〉 directions. An approach is presented that allows to determine, in combination with the simulation of transverse scans, the SF density from the simulation of the diffuse intensity streaks. SF densities as low as 0.4 × 103 cm–1 could be detected in high-quality CF-PVT grown crystals. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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