Properties in the Barrier-Type He+-Implanted Dy:Lu2Si2O7 Waveguide
Bin Yang
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorYa-Nan Miao
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorZe-Ang Li
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorHao-Zhe Chen
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorJia-Pei Wu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorJie Zhao
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorCorresponding Author
Chun-Xiao Liu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Correspondence: Chun-Xiao Liu ([email protected])
Search for more papers by this authorLiao-Lin Zhang
School of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou, China
Search for more papers by this authorBin Yang
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorYa-Nan Miao
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorZe-Ang Li
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorHao-Zhe Chen
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorJia-Pei Wu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorJie Zhao
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Search for more papers by this authorCorresponding Author
Chun-Xiao Liu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Correspondence: Chun-Xiao Liu ([email protected])
Search for more papers by this authorLiao-Lin Zhang
School of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou, China
Search for more papers by this authorABSTRACT
Dy:Lu2Si2O7 has great potential in applications for optical devices and systems. This study reports on the formation of planar waveguides on the Dy:Lu2Si2O7 crystal through helium ion implantation. The energy and dose of the He+-ion implantation are 400 keV and 6 × 1016 ions/cm2, respectively. The energy loss distribution caused by the irradiation in the Dy:Lu2Si2O7 was calculated using SRIM 2013 to investigate the physical mechanism of waveguide formation. The optical microscope image of the waveguide cross-section was captured using a Nikon microscope. The prism coupler was used to record the spectrum of propagating modes from which the refractive index of the waveguide could be obtained based on the reflective calculation method. The guiding properties of light in the waveguide were studied using an end-fire coupling system. The results, including the core refractive index of 1.7477 and the propagation loss of 2.2 dB/cm at 632.8 nm, have potential applications in the development of optical waveguide devices.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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