Microwave and Optical Technology Letters

Research Article

Switch-mode power amplifier design method

Corresponding Author

Mladen Božanić

[email protected]

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South Africa

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South AfricaSearch for more papers by this author

Saurabh Sinha,

Saurabh Sinha

[email protected]

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South Africa

Search for more papers by this author

Mladen Božanić,

Corresponding Author

Mladen Božanić

[email protected]

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South Africa

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South AfricaSearch for more papers by this author

Saurabh Sinha,

Saurabh Sinha

[email protected]

University of Pretoria, Cnr Lynnwood and University Road, Pretoria 0001, South Africa

Search for more papers by this author

First published: 21 September 2011

https://doi.org/10.1002/mop.26444

Citations: 3

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Abstract

In this letter, it is shown that doctrines behind the devised switch-mode design method investigated by means of simulations for 0.35-μm technology are indeed technology node and application independent.Experimental results verifying this claim are presented for 180-nm SiGe BiCMOS process. Furthermore, a possible expansion of the method is proposed for mm-wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2724–2728, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26444

REFERENCES

1 D.Y.C. Lie, J. Lopez, J.D. Popp, J.F. Rowland, G. Wang, G. Qin, and Z. Ma, Highly efficient monolithic class E SiGe power amplifier design at 900 and 2400 MHz, IEEE Trans Circuits Systems-I: Reg Papers, 56 ( 2009), 1455–1466.
10.1109/TCSI.2008.2010145
Web of Science® Google Scholar
2 J.S. Walling, H. Lakdawala, Y. Palaskas, A. Ravi, O. Degani, K. Soumyanath, and D.J. Allstot, A Class-E PA with pulse-width and pulse-position modulation in 65nm CMOS, IEEE J Solid-State Circuits 44 ( 2009), 1668–1678.
10.1109/JSSC.2009.2020205
Web of Science® Google Scholar
3 J. Carls, F. Ellinger, U. Joerges, and M. Krcmar, Highly-efficient CMOS C-band class-F power amplifier for low supply voltages, Electron Lett 45 ( 2009), 1240–1241.
10.1049/el.2009.1252
Web of Science® Google Scholar
4 J.A. O'Sullivan, K.G. McCarthy, A.C. Murphy, and P.J. Murphy, Investigation into SiGe HBT Class E/F PA Efficiency at 2 GHz for VDD from 1 to 1.8 V, IEEE Microwave Wireless Compon Lett 16 ( 2006), 170–172.
10.1109/LMWC.2006.872144
Web of Science® Google Scholar
5 H.L. Tu, I.S. Chen, P.C. Yeh, and H.K. Chiou, High performance spiral inductor on deep-trench-mesh silicon substrate, IEEE Microwave Wireless Compon Lett 16 ( 2006), 654–656.
10.1109/LMWC.2006.885608
Web of Science® Google Scholar
6 M. Božanić and S. Sinha, Design flow for CMOS based Class-E and Class-F power amplifiers, IEEE AFRICON, Nairobi, Kenya, 2009, pp 1–6.
Google Scholar
7 M. Božanić and S. Sinha, Design methodology for SiGe-Based Class-E power amplifier, South African Conference on Semi and Superconductor Technology, Stellenbosch, South Africa, 2009, pp. 31–36.
Google Scholar
8 M. Božanić, S. Sinha, and A. Müller, Streamlined design of SiGe based power amplifiers, Rom J Inf Science Tech 13 ( 2010), 22–32.
Web of Science® Google Scholar
9 D. Foty, S. Sinha, M. Weststrate, C. Coetzee, A. Uys, and E. Sibanda, mm-wave radio communication systems, the quest continues, Proceedings of the International Radio Electronics Forum on Applied Radio Electronics: The State and Prospects of Development, Kharkov, Ukraine, 2008, pp 14–18.
Google Scholar
10 N.A. Sokal and A.D. Sokal, Class E-A new class of high-efficiency tuned single-ended switching power amplifiers, IEEE J Solid-State Circuits 10 ( 1975), 168–176.
10.1109/JSSC.1975.1050582
Web of Science® Google Scholar
11 F.H. Raab, Maximum efficiency and output of Class-F power amplifiers, IEEE Trans Microwave Theory Tech 49 ( 2001), 1162–1166.
10.1109/22.925511
Web of Science® Google Scholar
12 S.S. Mohan, M. del Mar Hershenson, S.P. Boyd, and T.H. Lee, Simple accurate expressions for planar spiral inductances, IEEE J Solid-State Circuits 34 ( 1999), 1419–1424.
10.1109/4.792620
Web of Science® Google Scholar
13 J.L. Kuo, Z.M. Tsai, K.Y. Lin, and H. Wang, A 50 to 70 GHz power amplifier using 90 nm CMOS technology, IEEE Microwave Wireless Compon Lett 19 ( 2009), 45–47.
10.1109/LMWC.2008.2008603
Web of Science® Google Scholar
14 A. Grebennikov and N.O. Sokal, Switchmode RF power amplifiers, Elsevier, 2007.
Google Scholar
15 A.C. Davies, An overview of Bluetooth wireless technology™ and some competing LAN standards, IEEE International Conference on Circuits and Systems for Communications, St. Petersburg, Russia, 2002, pp. 206–211.
Google Scholar

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Volume53, Issue12

December 2011

Pages 2724-2728

Switch-mode power amplifier design method

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