Volume 51, Issue 11 pp. 2786-2788

Microwave operation of sub-micrometer gate surface channel MESFETs in polycrystalline diamond

P. Calvani

Corresponding Author

P. Calvani

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, Italy

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, ItalySearch for more papers by this author
A. Corsaro

A. Corsaro

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, Italy

Search for more papers by this author
F. Sinisi

F. Sinisi

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, Italy

Search for more papers by this author
M. C. Rossi

M. C. Rossi

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, Italy

Search for more papers by this author
G. Conte

G. Conte

Department of Electronic Engineering, University of Roma Tre, Via Vasca Navale 8, 00146 Rome, Italy

Search for more papers by this author
E. Giovine

E. Giovine

Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Rome, Italy

Search for more papers by this author
W. Ciccognani

W. Ciccognani

Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133 Rome, Italy

Search for more papers by this author
E. Limiti

E. Limiti

Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133 Rome, Italy

Search for more papers by this author
First published: 25 August 2009
Citations: 3

Abstract

Submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated—large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut-off frequency ft = 10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200–500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2786–2788, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24738

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.