Volume 15, Issue 8 2100057
Research Article

High Speed Evanescent Quantum-Dot Lasers on Si

Yating Wan

Yating Wan

Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Chao Xiang

Chao Xiang

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Joel Guo

Joel Guo

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Rosalyn Koscica

Rosalyn Koscica

Materials department, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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MJ Kennedy

MJ Kennedy

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Jennifer Selvidge

Jennifer Selvidge

Materials department, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Zeyu Zhang

Zeyu Zhang

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Lin Chang

Lin Chang

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Weiqiang Xie

Weiqiang Xie

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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Duanni Huang

Duanni Huang

Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA, 95054 USA

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Arthur C. Gossard

Arthur C. Gossard

Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

Materials department, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

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John E. Bowers

Corresponding Author

John E. Bowers

Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

Materials department, University of California Santa Barbara, Santa Barbara, CA, 93106 USA

E-mail: [email protected]

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First published: 27 June 2021
Citations: 86

Abstract

Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record-setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side-mode-suppression-ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 °C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si-on-insulator low-loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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