Volume 59, Issue 8 pp. 729-746
Review

Transparent Conducting Electrodes for Quantum Dots Light Emitting Diodes

Hae-Jun Seok

Hae-Jun Seok

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeoggi-do, 16419 Republic of Korea

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Jae-Hoon Lee

Jae-Hoon Lee

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeoggi-do, 16419 Republic of Korea

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Jin-Hyeok Park

Jin-Hyeok Park

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeoggi-do, 16419 Republic of Korea

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Sang-Hwi Lim

Sang-Hwi Lim

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeoggi-do, 16419 Republic of Korea

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Prof. Han-Ki Kim

Corresponding Author

Prof. Han-Ki Kim

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeoggi-do, 16419 Republic of Korea

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First published: 14 May 2019
Citations: 11

Graphical Abstract

Abstract

In this review, we briefly describe a recent research development of transparent conducting electrodes (TCEs) for next-generation quantum dot-based light-emitting diodes (QDLEDs). Although sputtered Sn-doped In2O3 (ITO) and chemically grown F-doped SnO2 (FTO) electrodes have mainly been employed as transparent electrodes for QDLEDs, there have been great advances in TCE materials and fabrication processes. This review presents important characteristics of various TCE and applications in QDLEDs as a transparent cathode or anode. In particular, we will focus on characteristics of metal grids, metal nanowire, carbon nanotube, graphene, and hybrid electrodes for QDLEDs as promising alternatives to typical ITO and FTO electrodes. In addition, we discuss the current status of transparent conducting oxide-based QDLEDs. By comparing the performances of QDLED with different TCEs, we suggest promising alternatives ITO or FTO electrodes.

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