Evaluation of electricity generation on GeSn single-junction solar cell
Xinmiao Zhu
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorCorresponding Author
Min Cui
Faculty of Science, Beijing University of Technology, Beijing, China
Correspondence
Min Cui, Faculty of Science, Beijing University of Technology, Beijing 100124, China.
Email: [email protected]
Search for more papers by this authorYu Wang
Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming, China
Search for more papers by this authorTianjing Yu
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorQianying Li
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorJinxiang Deng
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorHongLi Gao
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorXinmiao Zhu
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorCorresponding Author
Min Cui
Faculty of Science, Beijing University of Technology, Beijing, China
Correspondence
Min Cui, Faculty of Science, Beijing University of Technology, Beijing 100124, China.
Email: [email protected]
Search for more papers by this authorYu Wang
Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming, China
Search for more papers by this authorTianjing Yu
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorQianying Li
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorJinxiang Deng
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorHongLi Gao
Faculty of Science, Beijing University of Technology, Beijing, China
Search for more papers by this authorFunding information: Beijing Natural Science Foundation Program, Grant/Award Number: 4192016
Summary
Electricity generation of GeSn single-junction solar cell has been carefully examined in both its p-on-n and n-on-p configurations in its normal and inverted structures. The superior p+/n construction with a critical doping of the light-doped layer (Nd = 7.5 × 1018 cm−3) has been observed. For the normal one, the active layer should be composed of 50-100 nm emitter and 3-5 μm base to less material costs. Moreover, dislocation density and 1 MeV electron fluence should be lower than 1 × 105 cm−2 and 1 × 1010 cm−2, respectively, which is helpful for obtaining a preferable conversion efficiency. To explore lower cost solar cell, the simulated results might be favorable to guide experimental fabrication of GeSn devices.
REFERENCES
- 1Hohn O, Niemeyer M, Weiss C, Lackner D, Dimroth F. Development of germanium-based wafer-bonded four-junction solar cells. IEEE J Photovolt. 2019; 9(6): 1-6.
- 2Nuñez N, Vazquez M, Barrutia L, et al. Estimation of activation energy and reliability figures of space lattice-matched GaInP/Ga(In)As/Ge triple junction solar cells from temperature accelerated life tests. Sol Energy Mater Sol Cells. 2021; 230:111211.
- 3García I, Barrutia L, Dadgostar S, Hinojosa M, Johnson A, Rey-Stolle I. Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates. Sol Energy Mater Sol Cells. 2021; 225:111034.
- 4Aierken A, Fang L, Heini M, et al. Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells. Sol Energy Mater Sol Cells. 2018; 185: 36-44.
- 5Ho W-J, Liu J-J, Chen X-Y, Xiao H-P. Light-trapping and spectral modulation to increase the conversion efficiency of triple-junction GaAs solar cells using antireflective coating comprising a periodic array of cone-shaped TiO2 structures. Int J Energy Res. 2021; 1-12.
- 6Geisz JF, France RM, Schulte KL, et al. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 suns concentration. Nat Energy. 2020; 5(4): 326-335.
- 7Guter W, Dunzer F, Ebel L, et al. Space solar cells – 3G30 and next generation radiation hard products. E3S Web Conf. 2017; 16:03005.
10.1051/e3sconf/20171603005 Google Scholar
- 8Park S, Cavani O, Lefevre J, Baur C, Khorenko V, Boizot B. Space degradation of triple junction solar cells at low temperatures: II-electron irradiation. Int J Energy Res. 2021; 45(12): 17942-17954.
- 9Sukeerthi M, Kotamraju S. Study of degradation in 3J inverted metamorphic (IMM) solar cell due to irradiation-induced deep level traps and threading dislocations using finite element analysis. Phys E-Low-Dimens Syst Nanostruct. 2021; 127:114566.
- 10Cano P, Hinojosa M, Nguyen H, et al. Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers. Sol Energy Mater Sol Cells. 2020; 205:110246.
- 11Huo P, Lombardero I, García I, Rey-Stolle I. Enhanced performance of GaInP/GaAs/Ge solar cells under high concentration through Pd/Ge/Ti/Pd/Al grid metallization. Prog Photovolt Res Appl. 2019; 27(9): 789-797.
- 12Mahmodi H, Hashim MR. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−xSnx films on Si substrate. Chin Phys B. 2017; 26(5):56801.
- 13Wang X, Chen C, Feng S, Wei X, Li Y. A hybrid functional first-principles study on the band structure of non-strained Ge1−xSnx alloys. Chin Phys B. 2017; 26(12):127402.
- 14Imbrenda D, Hickey R, Carrasco RA, et al. Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy. Appl Phys Lett. 2018; 113(12):122104.
- 15Conley BR, Naseem H, Sun G, Sharps P, Yu SQ. High efficiency MJ solar cells and TPV using SiGeSn materials. Paper presented at: IEEE Photovoltaic Specialists Conference; June 3–8, 2012; Austin, TX.
- 16Conley BR, Mosleh A, Ghetmiri SA, Naseem HA, Tolle J, Yu SQ. CVD growth of Ge1−xSnx using large scale Si process for higher efficient multi-junction solar cells. Paper presented at: IEEE 39th Photovoltaic Specialists Conference (PVSC); June 16–21, 2013; Tampa, FL.
- 17Li H, Brouillet J, Salas A, Wang X, Liu J. Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics. Opt Mater Exp. 2013; 3(9): 1385-1396.
- 18Ramasamy K, Kotula PG, Fidler AF, Brumbach MT, Ivanov SA. SnxGe1−x alloy nanocrystals: a first step toward solution-processed group IV photovoltaics. Chem Mater. 2015; 27(13): 4640-4649.
- 19Kondratenko SV, Hyrka YV, Mazur YI, et al. Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1−xSnx thin films on a Ge/Si(001) substrate. Acta Mater. 2019; 171: 40-47.
- 20Pham T, Du W, Tran H, et al. Systematic study of Si-based GeSn photodiodes with 2.6 μm detector cut off for short-wave infrared detection. Opt Express. 2016; 24(5): 4519-4531.
- 21Sze SM, Mattis DC. Physics of semiconductor devices. Phys Today. 1970; 23(6):75.
10.1063/1.3022205 Google Scholar
- 22Paul J, Mondal C, Biswas A. Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects. Mater Sci Semicond Process. 2019; 94: 128-135.
- 23Caughey DM, Thomas RE. Carrier mobilities in silicon empirically related to doping and field. Proc IEEE. 1967; 55(12): 2192-2193.
- 24Basu PK. Theory of Optical Processes in Semiconductors: Bulk and Microstructures. Oxford: Clarendon Press; 1997.
- 25Auston DH, Shank CV, Lefur P. Picosecond optical measurements of band-to-band auger recombination of high-density plasmas in germanium. Phys Rev Lett. 1975; 35(15): 1022-1025.
- 26Sermage B, Eichler HJ, Heritage JP, Nelson RJ, Dutta NK. Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsP. Appl Phys Lett. 1983; 42(3): 259-261.
- 27Gaubas E, Bauža M, Uleckas A, Vanhellemont J. Carrier lifetime studies in Ge using microwave and infrared light techniques. Mater Sci Semicond Process. 2006; 9(4–5): 781-787.
- 28Jacoboni C, Nava F, Canali C, Ottaviani G. Electron-drift velocity and diffusivity in germanium. Phys Rev B. 1981; 24(2): 1014-1026.
- 29Liu Z, Wen J, Zhang X, et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth. J Phys D Appl Phys. 2014; 48(44):445103.
- 30Liu L, Liang R, Wang J, Xu J. Investigation on the effective mass of Ge1−xSnx alloys and the transferred-electron effect. Appl Phys Express. 2015; 3(8):031301.
- 31Chadi DJ. Spin-orbit splitting in crystalline and compositionally disordered semiconductors. Phys Rev B. 1977; 16(2): 790-796.
- 32Virgilio M, Manganelli CL, Grosso G, Schroeder T, Capellini G. Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers. J Appl Phys. 2013; 114(24):243102.
- 33Zhu X-M, Cui M, Wang Y, Yu T-J, Deng J-X, Gao H-L. Study of GeSn (0.524 eV) single-junction thermophotovoltaic cells based on device transport model. Chin Phys B. 2021; 31:05881.
- 34Yamaguchi M, Amano C, Itoh Y. Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates. J Appl Phys. 1989; 66(2): 915-919.
- 35Sasaki T, Arafune K, Metzger W, et al. Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates. Sol Energy Mater Sol Cells. 2009; 93(6–7): 936-940.
- 36Dou W, Benamara M, Mosleh A, et al. Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth. Sci Rep. 2018; 8(1):5640.
- 37Moto K, Yoshimine R, Suemasu T, Toko K. Improving carrier mobility of polycrystalline Ge by Sn doping. Sci Rep. 2018; 8(1):14832.
- 38Du W, Ghetmiri SA, Margetis J, et al. Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure. J Appl Phys. 2017; 122(12):123102.
- 39Assali S, Nicolas J, Moutanabbir O. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. J Appl Phys. 2019; 125(2):025304.
- 40Queisser HJ, Panish MB. Luminescence of zinc doped solution grown gallium arsenide. J Phys Chem Solids. 1967; 28(7): 1177-1184.
- 41Zuleeg R, Lehovec K. Radiation effects in Gaas junction field-effect transistors. IEEE Trans Nucl Sci. 1980; 27(5): 1343-1354.
