Double inorganic hole extraction layer of Cs:NiOx/CuInS2 for efficiency and stability enhancement of perovskite solar cells
Zhenlong Zhang
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorWenbo Ma
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorQing Zhou
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorCorresponding Author
Yanli Mao
School of Physics and Electronics, Henan University, Kaifeng, China
Correspondence
Yanli Mao, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
Email: [email protected]
Search for more papers by this authorZhenlong Zhang
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorWenbo Ma
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorQing Zhou
School of Physics and Electronics, Henan University, Kaifeng, China
Search for more papers by this authorCorresponding Author
Yanli Mao
School of Physics and Electronics, Henan University, Kaifeng, China
Correspondence
Yanli Mao, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
Email: [email protected]
Search for more papers by this authorSummary
In this work, we construct a double inorganic hole extraction layer (HEL) of Cs:NiOx/CuInS2 by inserting a thin film of Cs:NiOx between the perovskite (FAPbI3)1-x (MAPbBr3)x and CuInS2 layers and fabricate n-i-p type perovskite solar cells (PSCs) using Cs:NiOx/CuInS2 as HEL. The efficiency of the PSCs with Cs:NiOx/CuInS2 reaches 18.04% from 16.13% for the devices with single HEL of CuInS2, which is close to the highest efficiency (19.24%) of the devices with double inorganic HEL reported. In addition, the operational stability of the devices with Cs:NiOx/CuInS2 is enhanced. The solar cells based on double HEL of Cs:NiOx/CuInS2 maintains 95% of the original PCE after keeping 32 days in ambient air, while the devices based on single HEL of CuInS2 keeps only 84% of the original PCE. In addition, the thermal stability of the PSCs with Cs:NiOx/CuInS2 is also enhanced compared with the devices based on CuInS2. The results demonstrate that the application of double HEL of Cs:NiOx/CuInS2 can enhance the performance and stability of PSCs simultaneously.
Supporting Information
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